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參數(shù)資料
| 型號： | K4C89323AF-TCF6 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
| 中文描述： | 2097152 - 4字×銀行× 36位的雙數(shù)據(jù)速率網(wǎng)絡(luò)內(nèi)存 |
| 文件頁數(shù)： | 47/58頁 |
| 文件大?。?/td> | 1340K |
| 代理商： | K4C89323AF-TCF6 |
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K4C89363AF
- 47 -
REV. 0.0 Sep. 2002
0
2
3
4
5
6
7
n-1
n
n+1
n+2
1
Auto-Refresh Timing (CL=4, BL=4)
RDA
LAL
DESL
WRA
REF
DESL
Ror
WRA
Bank,
UA
LA
Command
Bank, Address
LREF
Q0
Q1
Q2
Q3
LQS/UQS
(output)
DQ
(output)
Unidirectional DS/Free Running QS mode
CL=4
l
R C
=5cycles
l
R E F C
=19cycles
～
l
R C D
=1cycle
l
R A S
=4cycles
l
R C D
=1cycle
Low
Hi-Z
Low
Hi-Z
～
～
～
RDA
LAL
DESL
WRA
REF
DESL
Ror
WRA
Bank,
UA
LA
Command
Bank, Address
LREF
Q0
Q1
Q2
Q3
LQS/UQS
(output)
DQ
(output)
CL=4
l
R C
=5cycles
l
R E F C
=19cycles
～
～
l
R C D
=1cycles
l
R A S
=4cycles
l
R C D
=1cycles
Hi-Z
Hi-Z
～
～
In case of CL=4, I
R E F C
must be meet 19 clock cycles.
When the Auto-Refresh operation is perfomed, the synthetic average interval of Auto-Refresh command
specified by t
REFI
must be satisfied.
t
R E F I
is average interval time in 8 Refresh cycles that is sampled randomly.
Note :
Unidirectional DS/QS mode
WRAREF
～
WRA REF
～
WRAREF
～
～
WRAREF
～
WRAREF
t
1
t
2
t
3
t
7
t
8
8 Refresh cycle
Total time of 8 Refresh cycle
8
t
1
+t
2
+t
3
+t
4
+t
5
+t
6
+t
7
+t
8
8
=
t
REFI
=
t
REFI
is specified to avoid partly concentrated current of Refresh operation that is acivated
larger are than Read/Write operation.
CLK
CLK
CLK
CLK
CLK
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4C89323AF-TCFB | 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
| K4C89363AF | 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
| K4C89363AF-GCF5 | 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
| K4C89363AF-GCF6 | 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
| K4C89363AF-GCFB | 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4C89323AF-TCFB | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
| K4C89363AF | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
| K4C89363AF-GCF5 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
| K4C89363AF-GCF6 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
| K4C89363AF-GCFB | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
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