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參數(shù)資料
| 型號： | K4C89323AF-TCF6 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
| 中文描述： | 2097152 - 4字×銀行× 36位的雙數(shù)據(jù)速率網(wǎng)絡(luò)內(nèi)存 |
| 文件頁數(shù)： | 50/58頁 |
| 文件大?。?/td> | 1340K |
| 代理商： | K4C89323AF-TCF6 |
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K4C89363AF
REV. 0.0 Nov. 2002
- 50 -
Function Description
Network - DRAM
Network - DRAM is an acronym of Double Data Rate Network - DRAM.
Network - DRAM is competent to perform fast random core access, low latency and high-speed data transfer.
Pin Functions
Clock Inputs : CLK & CLK
The CLK and C L K inputs are used as the reference for synchronous operation. CLK is master clock input. The C S, FN and all
address input signals are sampled on the crossing of the positive edge of CLK and the negative edge of CLK . The QS and DQ output
data are aligned to the crossing point of CLK and C L K . The timing reference point for the differential clock is when the CLK and C L K
signals cross during a transition.
Power Down : PD
T h e PD input controls the entry to the Power Down or Self-Refresh modes. The PD input does not have a Clock Suspend function like
a CKE input of a standard SDRAMs, therefore it is illegal to bring PD pin into low state if any Read or Write operation is being per-
formed.
Chip Select & Function Control : C S & FN
The C S and FN inputs are a control signal for forming the operation commands on Network-DRAM. Each operation mode is decided
by the combination of the two consecutive operation commands using the C S and FN inputs.
Bank Addresses : BA0 & BA1
The BA0 and BA1 inputs are latched at the time of assertion of the RDA or WRA command and are selected the bank to be used for
the operation. BA0 and BA1 also define which mode register is loaded during the Mode Register Set command (MRS or EMRS).
Address Inputs : A0 to A14
Address inputs are used to access the arbitrary address of the memory cell array within each bank. The Upper Addresses with Bank
address are latched at the RDA or WRA command and the Lower Addresses are latched at the LAL command. The A0 to A14 inputs
are also used for setting the data in the Regular or Extended Mode Register set cycle.
B A 0
B A 1
B a n k # 0
0
0
B a n k # 1
1
0
B a n k # 2
0
1
B a n k # 3
1
1
Upper Address
Lower Address
K 4 C 8 9 3 6 3 A F
A 0 t o A 1 4
A 0 t o A 6
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4C89323AF-TCFB | 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
| K4C89363AF | 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
| K4C89363AF-GCF5 | 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
| K4C89363AF-GCF6 | 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
| K4C89363AF-GCFB | 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4C89323AF-TCFB | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
| K4C89363AF | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
| K4C89363AF-GCF5 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
| K4C89363AF-GCF6 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
| K4C89363AF-GCFB | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
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