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參數(shù)資料
| 型號： | K4C89323AF-TCF6 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
| 中文描述： | 2097152 - 4字×銀行× 36位的雙數(shù)據(jù)速率網(wǎng)絡(luò)內(nèi)存 |
| 文件頁數(shù)： | 51/58頁 |
| 文件大?。?/td> | 1340K |
| 代理商： | K4C89323AF-TCF6 |
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K4C89363AF
REV. 0.0 Nov. 2002
- 51 -
Functional Description (Continued)
Data Input/Output : DQ0 ~ DQ35
The input data of DQ0 to DQ35 are taken in synchronizing with the both edges of LDS/UDS input signal.
The output data of DQ0 to DQ35 are outputted synchronizing with the both edges of LQS/UQS output signal.
Data Strobe : DS(LDS/UDS) or QS(LQS/UQS)
Method of data strobe is chosen by Extended mode register.
(1) Unidirectional DS/QS mode
DS is input signal and QS is output signal. Both edges of DS are used to sample all DQs at Write operation. Both edges of QS
are used for trigger signal of all DQs at Read operation. During Write, Auto-Refresh and NOP cycle, QS assert always "Low"
level. QS is Hi-Z in Self-Refresh mode.
(2) Unidirectional DS/Free running QS mode
DS is input signal and QS is output signal. Both edges of DS are used to sample all DQs at Write operation. Both edges of QS
are used for trigger signal of all DQs at Read operation. QS assert always toggle signal except Self-Refresh mode. This strobe
type is easy to use for pin to pin connect application.
Power Supply : V
D D
, V
D D Q
, V
SS
, V
SSQ
V
DD
and V
SS
are supply pins for memory core and peripheral circuits.
V
DDQ
and V
S S Q
are power supply pins for the output buffer.
Reference Voltage : V
REF
V
REF
is reference voltage for all input signals.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4C89323AF-TCFB | 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
| K4C89363AF | 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
| K4C89363AF-GCF5 | 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
| K4C89363AF-GCF6 | 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
| K4C89363AF-GCFB | 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4C89323AF-TCFB | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
| K4C89363AF | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
| K4C89363AF-GCF5 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
| K4C89363AF-GCF6 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
| K4C89363AF-GCFB | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
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