參數(shù)資料
型號： K4C89323AF-TCFB
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM
中文描述： 2097152 - 4字×銀行× 36位的雙數(shù)據(jù)速率網(wǎng)絡(luò)內(nèi)存
文件頁數(shù)： 12/58頁
文件大?。?/td> 1340K
代理商： K4C89323AF-TCFB
K4C89363AF
REV. 0.0 Nov. 2002
- 12 -
Power Up Sequence
1. As for PD , being maintained by the low state (<0.2V) is desirable before a power-supply injection.
2. Apply V
DD
before or at the same time as V
DDQ
.
3. Apply V
D D Q
before or at the same time as V
REF
.
4. Start clock (CLK, C L K ) and maintain stable condition for 200us (min.).
5. After stable power and clock, apply DESL and take PD = H .
6. Issue EMRS to enable DLL and to define driver strength and data strobe type. (Note : 1)
7. Issue MRS for set C A S Latency (CL), Burst Type (BT), and Burst Length (BL). (Note : 1)
8. Issue two or more Auto-Refresh commands. (Note:1)
9. Ready for normal operation after 200 clocks from Extended Mode Register programming.
Note :
1. Sequence 6, 7 and 8 can be issued in random order.
2. L=Logic Low, H = Logic High
DESL
RDA MRS
DESL
RDA MRS
～
DESL
～
WRA REF
WRA REF
DESL
DESL
EMRS
MRS
op-code
op-code
～
VDD
VDDQ
VREF
C L K
C L K
PD
C o m m a n d
Address
DQ
D S
～
～
～
～
～
～
～
～
～
～
～
～
～
～
～
～
～
～
～
～
～
～
～
～
～
～
～
～
～
～
～
～
～
～
～
～
～
～
～
～
～
～
200
μ
s(min)
I
P D A
l
R S C
l
R S C
l
R E F C
2.5V(TYP)
1.8V(TYP)
0.9V(TYP)
l
REFC
t
P D E X
200 clock cycle(min)
Q S
E M R S
Hi-Z
(Free RuQ S
(Uni-QS mode)
M R S
Auto Refresh cycle
Normal Operation
～
～
～
～
～
～
～
～
Low
相關(guān)PDF資料
PDF描述
K4C89363AF 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM
K4C89363AF-GCF5 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM
K4C89363AF-GCF6 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM
K4C89363AF-GCFB 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM
K4C89363AF-TCF5 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K4C89363AF 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM
K4C89363AF-GCF5 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM
K4C89363AF-GCF6 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM
K4C89363AF-GCFB 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM
K4C89363AF-TCF5 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM
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