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| 型號： | K4C89323AF-TCFB |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
| 中文描述： | 2097152 - 4字×銀行× 36位的雙數(shù)據(jù)速率網(wǎng)絡(luò)內(nèi)存 |
| 文件頁數(shù)： | 18/58頁 |
| 文件大小： | 1340K |
| 代理商： | K4C89323AF-TCFB |
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K4C89363AF
REV. 0.0 Nov. 2002
- 18 -
Function Truth Table (Notes : 1,2,3)
Command Truth Table (Notes : 4)
T h e F i r s t C o m m a n d
S y m b o l
Function
CS
FN
B A 1 - B A 0
A14-A9
A 8
A 7
A 6 - A 0
D E S L
Device Deselect
H
X
X
X
X
X
X
R D A
Read with Auto-close
L
H
B A
U A
U A
UA
UA
W R A
Write with Auto-close
L
L
B A
U A
U A
UA
UA
T h e S e c o n d C o m m a n d ( T h e n e x t c l o c k o f R D A o r W R A c o m m a n d )
Notes :
1. L = Logic Low, H = Logic High, X = either L or H, V = Valid (Specified Value), BA = Bank Address, UA = Upper Address,
LA = Lower Address.
2. All commands are assumed to issue at a valid state.
3. All inputs for command (excluding SELFX and PDEX) are latched on the crossing point of differential clock input where
CLK goes to High.
4. Operation mode is decided by the comination of 1st command and 2nd command refer to "STATE DIAGRAM" and the
command table below.
S y m b o l
Function
CS
F N
B A 1 - B A 0
A14-A13
A12-A11
A10-A9
A8
A 7
A 6 - A 0
LAL
Lower Address Latch
H
X
X
V
X
X
X
X
L A
R E F
Auto-Refresh
L
X
X
X
X
X
X
X
X
M R S
Mode Register Set
L
X
V
L
L
L
L
V
V
Read Command Table
C o m m a n d ( S y m b o l )
C S
FN
B A 1 - B A 0
A 1 4 - A 9
A 8
A 7
A 6 - A 0
Notes
RDA (1st)
L
H
B A
UA
UA
U A
U A
LAL (2nd)
H
X
X
X
X
X
L A
Write Command Table
Notes :
5. A14~A13 are used for Variable Write Length (VW) control at Write Operation.
C o m m a n d ( S y m b o l )
CS
F N
BA1-
B A 0
A 1 4
A 1 3
A 1 2
A 1 1
A 1 0 ~
A 9
A 8
A 7
A 6 - A 0
WRA (1st)
L
L
B A
U A
UA
U A
U A
U A
U A
U A
U A
LAL (2nd)
H
X
X
V W 0
V W 1
X
X
X
X
X
L A
VW Truth Table
Function
V W 0
V W 1
BL = 2
Write All Words
L
X
Write First One Word
H
X
BL = 4
Reserved
L
L
Write All Words
H
L
Write First Two Words
L
H
Write First One Word
H
H
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4C89363AF | 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
| K4C89363AF-GCF5 | 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
| K4C89363AF-GCF6 | 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
| K4C89363AF-GCFB | 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
| K4C89363AF-TCF5 | 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4C89363AF | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
| K4C89363AF-GCF5 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
| K4C89363AF-GCF6 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
| K4C89363AF-GCFB | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
| K4C89363AF-TCF5 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
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