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參數(shù)資料
| 型號(hào)： | K4C89363AF-GCF6 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
| 中文描述： | 2097152 - 4字×銀行× 36位的雙數(shù)據(jù)速率網(wǎng)絡(luò)內(nèi)存 |
| 文件頁(yè)數(shù)： | 45/58頁(yè) |
| 文件大?。?/td> | 1340K |
| 代理商： | K4C89363AF-GCF6 |
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K4C89363AF
- 45 -
REV. 0.0 Sep. 2002
Extended Mode Register Set Timing (CL=4, BL=2)
From Read operation to Extended Mode Register Set operation
Command
A14~A0
RDA
DESL
LAL
LA
UA
BA
BA0, BA1
RDA
DESL
MRS
l
R C
=7cycles
LAL
LA
UA
BA1="0"
BA
or
WRA
BA0="0"
(opcode)
Valid
Unidirectional DS/Free Running QS mode
Low
Q0
Q1
Q0
Q1
Unidirectional DS/QS mode
Minimum delay from LAL following RDA to RDA of EMRS operation is CL+BL/2.
When DQ strobe mode is changed by EMRS, QS output is invalid for I
RSC
period.
DLL switch in Extended Mode Register must be set to enable mode for normal operation.
DLL lock-on time is needed after initial EMRS operation. See Power Up Sequence.
Note :
0
2
3
4
5
6
7
8
9
10
11
1
12
13
14
15
CLK
CLK
CL + BL/2
(Output)
LQS/UQS
(Output)
DQ
(Input)
LDS/UDS
(Output)
LQS/UQS
(Output)
DQ
(Input)
LDS/UDS
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| K4C89363AF-GCFB | 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4C89363AF-GCFB | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
| K4C89363AF-TCF5 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
| K4C89363AF-TCF6 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
| K4C89363AF-TCFB | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
| K4CAEKCBJA | 制造商:OTTO Engineering Inc 功能描述:Switch Toggle (ON) OFF (ON) SPST Lighted Bat Toggle Solder 16A 115VAC 28VDC Panel Mount with Snap-In |
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