參數(shù)資料
型號(hào): K4C89363AF-GCFB
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM
中文描述: 2097152 - 4字×銀行× 36位的雙數(shù)據(jù)速率網(wǎng)絡(luò)內(nèi)存
文件頁數(shù): 42/58頁
文件大小: 1340K
代理商: K4C89363AF-GCFB
K4C89363AF
- 42 -
REV. 0.0 Sep. 2002
Power Down Timing (CL=4, BL=4)
Write cycle to Power Down Mode
Command
WRA
LAL
Address
UA
DESL
LA
Unidirectional DS/Free Running QS mode
Unidirectional DS/QS mode
PD
t
IH
t
PDEX
t
IS
I
PD
=2 cycle
I
RC(min),
t
R E F I ( m a x )
Low
WL=3
D0
D1
D2
D3
WL=3
I
P D
=2 cycle
D0
D1
D2
D3
WL=3
PD must be kept "High" level until end of Burst data output.
PD should be brought to "High" within t
REFI
(max.) to maintain the data written into cell.
In Power Down Mode, PD "Low" and a stable clock signal must be maintained.
When PD is brought to "High", a valid executable command may be applied I
P D A
cycles later.
Note :
0
2
3
4
5
6
7
8
9
10
n-1
1
n
n+1
n+2
n+3
I
P D A
CLK
CLK
or
WRA
UA
DESL
(Output)
LQS/UQS
(Output)
DQ
(Input)
LDS/UDS
(Output)
LQS/UQS
(Output)
DQ
(Input)
LDS/UDS
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