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參數(shù)資料
| 型號(hào)： | K4C89363AF-TCF6 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
| 中文描述： | 2097152 - 4字×銀行× 36位的雙數(shù)據(jù)速率網(wǎng)絡(luò)內(nèi)存 |
| 文件頁(yè)數(shù)： | 32/58頁(yè) |
| 文件大?。?/td> | 1340K |
| 代理商： | K4C89363AF-TCF6 |
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K4C89363AF
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REV. 0.0 Sep. 2002
Multiple Bank Read Timing (CL=4)
Unidirectional DS/QS mode
BL =2
LDS/UDS
Unidirectional DS/Free Running QS mode
BL =2
LDS/UDS
Qa0 Qa1
CL=4
Low
Hi-Z
Command
Address
RDA
LAL
LA
UA
Bank
"a"
Bank Add.
RDA
LAL
DESL
RDA
LAL
RDA
LAL
RDA
LAL
RDA
LAL
RDA
LAL
RDA
LA
UA
LA
UA
LA
UA
LA
UA
LA
UA
LA
UA
UA
Bank
"b"
Bank
"a"
Bank
"b"
Bank
"c"
Bank
"d"
Bank
"a"
Bank
"b"
l
R B D
=2cycles
Qb0 Qb1
Qa0 Qa1
Qb0 Qb1
Qc0 Qc1
CL=4
Qa0 Qa1
CL=4
Low
Hi-Z
Qb0 Qb1
Qa0 Qa1
Qb0 Qb1
Qc0 Qc1
CL=4
Qa2Qa3
Qb2 Qb3
Qa2 Qa3
Qb2 Qb3
Qc2
Qa0 Qa1
CL=4
Hi-Z
Qb0 Qb1
Qa0 Qa1
Qb0 Qb1
Qc0 Qc1
CL=4
Qa0 Qa1
CL=4
Hi-Z
Qb0 Qb1
Qa0 Qa1
Qb0 Qb1
Qc0 Qc1
CL=4
Qa2Qa3
Qb2 Qb3
Qa2 Qa3
Qb2 Qb3
Qc2
l
R B D
=2cycles
l
RBD
=2cycles
l
RBD
=2cycles
l
R B D
=2cycles
l
RC
(Bank"a")=5cycles
l
R C
(Bank"a")=5cycles
CLK
CLK
Note : l
R C
to the same bank must be satisfied
(Output)
LQS/UQS
(Output)
DQ
(Input)
BL =4
(Output)
LQS/UQS
(Output)
DQ
(Input)
LDS/UDS
(Output)
LQS/UQS
(Output)
DQ
(Input)
BL =4
(Output)
LQS/UQS
(Output)
DQ
(Input)
LDS/UDS
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4C89363AF-TCFB | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
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