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參數(shù)資料
| 型號(hào)： | K4D261638F-TC2A |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 128Mbit GDDR SDRAM |
| 中文描述： | 128Mbit GDDR SDRAM內(nèi)存 |
| 文件頁(yè)數(shù)： | 12/18頁(yè) |
| 文件大小： | 225K |
| 代理商： | K4D261638F-TC2A |
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128M GDDR SDRAM
K4D261638F
- 12 -
Rev. 1.2 (Jan. 2004)
R
T
=50
Output
C
LOAD
=30pF
(Fig. 1) Output Load Circuit
Z0=50
V
REF
=0.5*V
DDQ
V
tt
=0.5*V
DDQ
DECOUPLING CAPACITANCE GUIDE LINE
Recommended decoupling capacitance added to power line at board.
Parameter
Symbol
Value
Unit
Decoupling Capacitance between V
DD
and V
SS
C
DC1
0.1 + 0.01
uF
Decoupling Capacitance between V
DDQ
and V
SSQ
C
DC2
0.1 + 0.01
uF
1. V
DD
and V
DDQ
pins are separated each other.
All V
DD
pins are connected in chip. All V
DDQ
pins are connected in chip.
2. V
SS
and V
SSQ
pins are separated each other
All V
SS
pins are connected in chip. All V
SSQ
pins are connected in chip.
Note :
AC OPERATING TEST CONDITIONS
(V
DD
=2.5V
±
5%, T
A
= 0 to 65
°
C)
1.For the K4D261638F-TC25/2A, VDD & VDDQ = 2.8V+0.1V.
Parameter
Value
Unit
Note
Input reference voltage for CK(for single ended)
0.50*V
DDQ
V
CK and CK signal maximum peak swing
1.5
V
CK signal minimum slew rate
1.0
V/ns
Input Levels(V
IH
/V
IL
)
V
REF
+0.35/V
REF
-0.35
V
Input timing measurement reference level
V
REF
V
Output timing measurement reference level
V
tt
V
Output load condition
See Fig.1
CAPACITANCE
(V
DD
=2.5V, T
A
= 25
°
C,
f=1MHz)
Parameter
Symbol
Min
Max
Unit
Input capacitance(
CK, CK )
C
IN1
1.0
5.0
pF
Input capacitance(A
0
~A
11
, BA
0
~BA
1
)
C
IN2
1.0
4.0
pF
Input capacitance
(
CKE, CS, RAS,CAS, WE )
C
IN3
1.0
4.0
pF
Data & DQS input/output capacitance(DQ
0
~DQ
15
)
C
OUT
1.0
6.5
pF
Input capacitance(DM0 ~ DM3)
C
IN4
1.0
6.5
pF
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