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128M GDDR SDRAM
K4D261638F
2M x 16Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM
with Bi-directional Data Strobe and DLL
- 3 -
Rev. 1.2 (Jan. 2004)
The K4D261638F is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x 2,097,152 words by
16 bits, fabricated with SAMSUNG
’
s high performance CMOS technology. Synchronous features with Data Strobe allow
extremely high performance up to 1.6GB/s/chip. I/O transactions are possible on both edges of the clock cycle. Range of
operating frequencies, programmable burst length and programmable latencies allow the device to be useful for a variety
of high performance memory system applications.
2.5V + 5% power supply for device operation
2.5V + 5% power supply for I/O interface
SSTL_2 compatible inputs/outputs
4 banks operation
MRS cycle with address key programs
-. Read latency 3, 4 and 5(clock)
-. Burst length (2, 4 and 8)
-. Burst type (sequential & interleave)
All inputs except data & DM are sampled at the positive
going edge of the system clock
Differential clock input
No Wrtie-Interrupted by Read Function
GENERAL DESCRIPTION
FEATURES
2 DQS’s ( 1DQS / Byte )
Data I/O transactions on both edges of Data strobe
DLL aligns DQ and DQS transitions with Clock transition
Edge aligned data & data strobe output
Center aligned data & data strobe input
DM for write masking only
Auto & Self refresh
32ms refresh period (4K cycle)
66pin TSOP-II
Maximum clock frequency up to 400MHz
Maximum data rate up to 800Mbps/pin
FOR 2M x 16Bit x 4 Bank DDR SDRAM
ORDERING INFORMATION
K4D261638F-LC is the Lead Free package part number.
For the K4D261638F-TC25/2A, VDD & VDDQ = 2.8V+0.1V
Part NO.
Max Freq.
Max Data Rate
Interface
Package
K4D261638F-TC25
400MHz
800Mbps/pin
SSTL_2
66pin TSOP-II
K4D261638F-TC2A
350MHz
700Mbps/pin
K4D261638F-TC33
300MHz
600Mbps/pin
K4D261638F-TC36
275MHz
550Mbps/pin
K4D261638F-TC40
250MHz
500Mbps/pin
K4D261638F-TC50
200MHz
400Mbps/pin