參數(shù)資料
型號(hào): K4E160812D
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: Aluminum Electrolytic Radial Lead Hi Temp Capacitor; Capacitance: 330uF; Voltage: 35V; Case Size: 10x20 mm; Packaging: Bulk
中文描述: 200萬(wàn)× 8位的CMOS動(dòng)態(tài)隨機(jī)存儲(chǔ)器的擴(kuò)展數(shù)據(jù)輸出
文件頁(yè)數(shù): 16/21頁(yè)
文件大?。?/td> 257K
代理商: K4E160812D
K4E170811D, K4E160811D
K4E170812D, K4E160812D
CMOS DRAM
HYPER PAGE READ AND WRITE MIXED CYCLE
RAS
V
IH
-
V
IL
-
CAS
V
IH
-
V
IL
-
A
V
IH
-
V
IL
-
W
V
IH
-
V
IL
-
OE
V
IH
-
V
IL
-
COLUMN
ADDRESS
ROW
ADDR
t
RASP
t
RP
Don
t care
Undefined
V
I/OH
-
V
I/OL
-
DQ0 ~ DQ3(7)
t
WEZ
t
CP
t
CP
t
HPC
t
HPC
t
HPC
t
RAD
t
RAH
t
ASC
t
CAH
t
CAH
t
CAH
t
ASC
t
CAH
t
RCH
t
RCS
t
RCS
t
RCH
t
ASC
COLUMN
ADDRESS
COL.
ADDR
VALID
DATA-OUT
t
REZ
t
AA
t
WCS
VALID
DATA-OUT
VALID
DATA-OUT
VALID
DATA-IN
t
RAC
COL.
ADDR
t
CAS
t
ASR
t
CAS
t
CAS
t
CAS
t
ASC
t
CP
t
RCH
t
WCH
t
WPE
t
CLZ
t
CPA
t
WED
t
AA
t
WEZ
t
DS
t
DH
t
CAC
t
OEA
READ(
t
CAC
)
READ(
t
CPA
)
WRITE
READ(
t
AA
)
t
RHCP
t
RAL
t
CLZ
相關(guān)PDF資料
PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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K4E170412D 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 4Bit CMOS Dynamic RAM with Extended Data Out
K4E170811D 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 8Bit CMOS Dynamic RAM with Extended Data Out
K4E170812D 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 8Bit CMOS Dynamic RAM with Extended Data Out