參數(shù)資料
型號: K4H1G0438E-TLB0
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: Aluminum Electrolytic Radial Lead Hi Temp Capacitor; Capacitance: 330uF; Voltage: 25V; Case Size: 10x16 mm; Packaging: Bulk
中文描述: 128MB DDR SDRAM的
文件頁數(shù): 36/53頁
文件大?。?/td> 669K
代理商: K4H1G0438E-TLB0
- 36 -
REV. 1.0 November. 2. 2000
128Mb DDR SDRAM
Current State
CS
RAS CAS
WE
Address
Command
Action
PRECHARG-
ING
(DURING tRP)
L
H
H
L
X
Burst Stop
ILLEGAL*2
L
H
L
X
BA, CA, A
10
READ/WRITE
ILLEGAL*2
L
L
H
H
BA, RA
Active
ILLEGAL*2
L
L
H
L
BA, A
10
PRE/PREA
NOP*4(Idle after
t
RP
)
ILLEGAL
L
L
L
H
X
Refresh
L
L
L
L
Op-Code, Mode-Add
MRS
ILLEGAL
ROW
ACTIVATING
(FROM ROW
ACTIVE TO
tRCD)
L
H
H
L
X
Burst Stop
ILLEGAL*2
L
H
L
X
BA, CA, A
10
READ/WRITE
ILLEGAL*2
L
L
H
H
BA, RA
Active
ILLEGAL*2
L
L
H
L
BA, A
10
PRE/PREA
ILLEGAL*2
L
L
L
H
X
Refresh
ILLEGAL
L
L
L
L
Op-Code, Mode-Add
MRS
ILLEGAL
WRITE
RECOVERING
(DURING tWR
OR tCDLR)
L
H
H
L
X
Burst Stop
ILLEGAL*2
L
H
L
H
BA, CA, A
10
READ
ILLEGAL*2
L
H
L
L
BA, CA, A
10
WRITE
WRITE
L
L
H
H
BA, RA
Active
ILLEGAL*2
L
L
H
L
BA, A
10
PRE/PREA
ILLEGAL*2
L
L
L
H
X
Refresh
ILLEGAL
L
L
L
L
Op-Code, Mode-Add
MRS
ILLEGAL
Table 9-3. Functional truth table
相關(guān)PDF資料
PDF描述
K4H1G0838A-TCA2 128Mb DDR SDRAM
K4H1G0838A-TCB0 128Mb DDR SDRAM
K4H1G0838A-TLA0 128Mb DDR SDRAM
K4H1G0838A-TLA2 128Mb DDR SDRAM
K4H1G0838A-TLB0 128Mb DDR SDRAM
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