參數(shù)資料
型號: K4M511533E
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: Mobile-SDRAM
中文描述: 移動SDRAM的
文件頁數(shù): 7/12頁
文件大?。?/td> 106K
代理商: K4M511533E
K4M511533E - Y(P)C/L/F
February 2004
Mobile-SDRAM
OPERATING AC PARAMETER
(AC operating conditions unless otherwise noted)
NOTES:
1. The minimum number of clock cycles is determined by dividing the minimum time required with clock cycle time and then rounding off to the next
higher integer.
2. Minimum delay is required to complete write.
3. Minimum tRDL=2CLK and tDAL(= tRDL + tRP) is required to complete both of last data write command(tRDL) and precharge command(tRP).
4. All parts allow every cycle column address change.
5. In case of row precharge interrupt, auto precharge and read burst stop.
Parameter
Symbol
Version
Unit
Note
-75
-1H
-1L
Row active to row active delay
t
RRD
(min)
15
19
19
ns
1
RAS to CAS delay
t
RCD
(min)
19
19
24
ns
1
Row precharge time
t
RP
(min)
19
19
24
ns
1
Row active time
t
RAS
(min)
45
50
60
ns
1
t
RAS
(max)
100
us
Row cycle time
t
RC
(min)
64
69
84
ns
1
Last data in to row precharge
t
RDL
(min)
2
CLK
2
Last data in to Active delay
t
DAL
(min)
tRDL + tRP
-
3
Last data in to new col. address delay
t
CDL
(min)
1
CLK
2
Last data in to burst stop
t
BDL
(min)
1
CLK
2
Col. address to col. address delay
t
CCD
(min)
1
CLK
4
Number of valid output data
CAS latency=3
2
ea
5
Number of valid output data
CAS latency=2
1
Number of valid output data
CAS latency=1
0
相關PDF資料
PDF描述
K4M511533E-C Mobile-SDRAM
K4M511533E-F1H Mobile-SDRAM
K4M511533E-F1L Mobile-SDRAM
K4M511533E-F75 Mobile-SDRAM
K4M511533E-L Mobile-SDRAM
相關代理商/技術參數(shù)
參數(shù)描述
K4M511533E-C 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Mobile-SDRAM
K4M511533E-F1H 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Mobile-SDRAM
K4M511533E-F1L 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Mobile-SDRAM
K4M511533E-F75 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Mobile-SDRAM
K4M511533E-L 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Mobile-SDRAM