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參數(shù)資料
| 型號(hào)： | K4M56323LE-MN1H |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
| 中文描述： | 2米x 32Bit的× 4銀行在90FBGA移動(dòng)SDRAM |
| 文件頁(yè)數(shù)： | 9/12頁(yè) |
| 文件大小： | 141K |
| 代理商： | K4M56323LE-MN1H |
K4M56323LE - M(E)E/N/S/C/L/R
February 2004
Mobile-SDRAM
SIMPLIFIED TRUTH TABLE
(V=Valid, X=Don
′
t Care, H=Logic High, L=Logic Low)
NOTES :
1. OP Code : Operand Code
A0 ~ A11 & BA0 ~ BA1 : Program keys. (@MRS)
2. MRS can be issued only at all banks precharge state.
A new command can be issued after 2 CLK cycles of MRS.
3. Auto refresh functions are the same as CBR refresh of DRAM.
The automatical precharge without row precharge command is meant by "Auto".
Auto/self refresh can be issued only at all banks precharge state.
Partial self refresh can be issued only after setting partial self refresh mode of EMRS.
4. BA0 ~ BA1 : Bank select addresses.
5. During burst read or write with auto precharge, new read/write command can not be issued.
Another bank read/write command can be issued after the end of burst.
New row active of the associated bank can be issued at tRP after the end of burst.
6. Burst stop command is valid at every burst length.
7. DQM sampled at the positive going edge of CLK masks the data-in at that same CLK in write operation (Write DQM latency is 0), but in read operation,
it makes the data-out Hi-Z state after 2 CLK cycles. (Read DQM latency is 2).
COMMAND
CKEn-1 CKEn
CS
RAS
CAS
WE
DQM BA0,1 A10/AP
A11,
A9 ~ A0
Note
Register
Mode Register Set
H
X
L
L
L
L
X
OP CODE
1, 2
Refresh
Auto Refresh
H
H
L
L
L
H
X
X
3
Self
Refresh
Entry
L
3
Exit
L
H
L
H
H
H
X
X
3
H
X
X
X
3
Bank Active & Row Addr.
H
X
L
L
H
H
X
V
Row Address
Read &
Column Address
Auto Precharge Disable
H
X
L
H
L
H
X
V
L
Column
Address
(A0~A8)
Column
Address
(A0~A8)
4
Auto Precharge Enable
H
4, 5
Write &
Column Address
Auto Precharge Disable
H
X
L
H
L
L
X
V
L
4
Auto Precharge Enable
H
4, 5
Burst Stop
H
X
L
H
H
L
X
X
6
Precharge
Bank Selection
H
X
L
L
H
L
X
V
L
X
All Banks
X
H
Clock Suspend or
Active Power Down
Entry
H
L
H
X
X
X
X
X
L
V
V
V
Exit
L
H
X
X
X
X
X
Precharge Power Down
Mode
Entry
H
L
H
X
X
X
X
X
L
H
H
H
Exit
L
H
H
X
X
X
X
L
V
V
V
DQM
H
X
V
X
7
No Operation Command
H
X
H
X
X
X
X
X
L
H
H
H
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4M56323LE-MN1L | RES 180K 5% 0603 |
| K4M56323LE-MN80 | 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
| K4M56323LE-MR1H | 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
| K4M56323LE-MR1L | 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
| K4M56323LE-MR80 | 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4M56323LE-MN1L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
| K4M56323LE-MN80 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
| K4M56323LE-MR1H | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
| K4M56323LE-MR1L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
| K4M56323LE-MR80 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
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