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參數(shù)資料
| 型號： | K4M56323LE-MN1L |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | RES 180K 5% 0603 |
| 中文描述： | 2米x 32Bit的× 4銀行在90FBGA移動SDRAM |
| 文件頁數(shù)： | 4/12頁 |
| 文件大?。?/td> | 141K |
| 代理商： | K4M56323LE-MN1L |
K4M56323LE - M(E)E/N/S/C/L/R
February 2004
Mobile-SDRAM
DC OPERATING CONDITIONS
Recommended operating conditions (Voltage referenced to V
SS
= 0V, T
A
= -25 to 85
°
C for Extended, -25 to 70
°
C for Commercial)
NOTES :
1. Samsung can support VDDQ 2.5V(in general case) and 1.8V(in specific case) for VDD 2.5V products.
Please contact to the memory marketing team in Samsung Electronics when considering the use of VDDQ 1.8V(Min 1.65V).
2. VIH (max) = 3.0V AC.The overshoot voltage duration is
≤
3ns.
3. VIL (min) = -1.0V AC. The undershoot voltage duration is
≤
3ns.
4. Any input 0V
≤
VIN
≤
VDDQ.
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with tri-state outputs.
5. Dout is disabled, 0V
≤
VOUT
≤
VDDQ.
Parameter
Symbol
Min
Typ
Max
Unit
Note
Supply voltage
V
DD
2.3
2.5
2.7
V
V
DDQ
2.3
2.5
2.7
V
1.65
-
2.7
V
1
Input logic high voltage
V
IH
0.8 x V
DDQ
-
V
DDQ
+ 0.3
V
2
Input logic low voltage
V
IL
-0.3
0
0.3
V
3
Output logic high voltage
V
OH
V
DDQ
-0.2
-
-
V
I
OH
= -0.1mA
Output logic low voltage
V
OL
-
-
0.2
V
I
OL
= 0.1mA
Input leakage current
I
LI
-10
-
10
uA
4
CAPACITANCE
(V
DD
= 2.5V, T
A
= 23
°
C, f = 1MHz, V
REF
=0.9V
±
50 mV)
Pin
Symbol
Min
Max
Unit
Note
Clock
C
CLK
3.0
8.0
pF
RAS, CAS, WE, CS, CKE
C
IN
3.0
8.0
pF
DQM
C
IN
1.5
4.0
pF
Address
C
ADD
3.0
8.0
pF
DQ
0
~ DQ
31
C
OUT
3.0
6.5
pF
ABSOLUTE MAXIMUM RATINGS
NOTES:
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
Parameter
Symbol
Value
Unit
Voltage on any pin relative to V
ss
V
IN
, V
OUT
-1.0 ~ 3.6
V
Voltage on V
DD
supply relative to V
ss
V
DD
, V
DDQ
-1.0 ~ 3.6
V
Storage temperature
T
STG
-55 ~ +150
°
C
Power dissipation
P
D
1.0
W
Short circuit current
I
OS
50
mA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4M56323LE-MN80 | 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
| K4M56323LE-MR1H | 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
| K4M56323LE-MR1L | 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
| K4M56323LE-MR80 | 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
| K4M56323LE-MS1H | 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4M56323LE-MN80 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
| K4M56323LE-MR1H | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
| K4M56323LE-MR1L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
| K4M56323LE-MR80 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
| K4M56323LE-MS1H | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
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