參數(shù)資料
型號: K4N51163QC-ZC25
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: ; Filter Type:RFI; Current Rating:180A; Voltage Rating:480V; Series:FN258 RoHS Compliant: Yes
中文描述: 512MB的GDDR2 SDRAM的
文件頁數(shù): 19/64頁
文件大?。?/td> 1420K
代理商: K4N51163QC-ZC25
- 19 -
Rev 1.5 Oct. 2005
512M gDDR2 SDRAM
K4N51163QC-ZC
Functional Description
Simplified State Diagram
Self
Idle
Setting
MRS
EMRS
Bank
Active
Precharging
Down
Writing
with
ACT
RDA
Read
SRF
REF
CKEL
(E)MRS
CKEH
CKEH
CKEL
Write
Automatic Sequence
Command Sequence
RDA
WRA
Read
Write
PR, PRA
PR
Refreshing
Refreshing
Power
Down
RDA
Reading
with
Autoprecharge
WRA
Active
PPower
Reading
Writing
PR(A) = Precharge (All)
(E)MRS = (Extended) Mode Register Set
SRF = Enter Self Refresh
REF = Refresh
CKEL = CKE low, enter Power Down
CKEH = CKE high, exit Power Down, exit Self Refresh
ACT = Activate
WR(A) = Write (with Autoprecharge)
RD(A) = Read (with Autoprecharge)
All banks
precharged
Activating
CKEH
Read
Write
CKEL
CKEL
Sequence
Initialization
OCD
calibration
CKEL
CKEL
CKEL
Autoprecharge
PR, PRA
PR, PRA
WRA
Note : Use caution with this diagram. It is indented to provide a floorplan of the possible state transitions and the commands to control
them, not all details. In particular situations involving more than one bank, enabling/disabling on-die termination, Power Down entry/
exit - among other things - are not captured in full detail.
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