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參數(shù)資料
| 型號： | K4N51163QC-ZC25 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | ; Filter Type:RFI; Current Rating:180A; Voltage Rating:480V; Series:FN258 RoHS Compliant: Yes |
| 中文描述： | 512MB的GDDR2 SDRAM的 |
| 文件頁數(shù)： | 21/64頁 |
| 文件大?。?/td> | 1420K |
| 代理商： | K4N51163QC-ZC25 |
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- 21 -
Rev 1.5 Oct. 2005
512M gDDR2 SDRAM
K4N51163QC-ZC
For application flexibility, burst length, burst type, CAS latency, DLL reset function, write recovery time(tWR) are user defined variables
and must be programmed with a Mode Register Set (MRS) command. Additionally, DLL disable function, driver impedance, additive
CAS latency, ODT(On Die Termination), single-ended strobe, and OCD(off chip driver impedance adjustment) are also user defined
variables and must be programmed with an Extended Mode Register Set (EMRS) command. Contents of the Mode Register(MR) or
Extended Mode Registers(EMR(#)) can be altered by re-executing the MRS and EMRS Commands. If the user chooses to modify only
a subset of the MRS or EMRS variables, all variables must be redefined when the MRS or EMRS commands are issued.
MRS, EMRS and Reset DLL do not affect array contents, which means reinitialization including those can be executed any time after
power-up without affecting array contents.
Initialization Sequence after Power Up
/CK
CK
CKE
Command
PRE
ALL
PRE
ALL
EMRS
MRS
REF
REF
MRS
EMRS
EMRS
ANY
CMD
DLL
ENABLE
DLL
RESET
OCD
Default
OCD
CAL. MODE
EXIT
Follow OCD
Flowchart
400ns
tRFC
tRFC
tRP
tRP
tMRD
tMRD
tMRD
tOIT
min. 200 Cycle
NOP
ODT
tCL
tCH
tIS
V
IH(ac)
Programming the Mode Register
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4N51163QC-ZC2A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mbit gDDR2 SDRAM |
| K4N51163QC-ZC33 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mbit gDDR2 SDRAM |
| K4N51163QC-ZC36 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mbit gDDR2 SDRAM |
| K4N51163QG | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Graphic Memory |
| K4N51163QZ | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Graphic Memory |
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