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參數(shù)資料
| 型號： | K4N51163QC-ZC25 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | ; Filter Type:RFI; Current Rating:180A; Voltage Rating:480V; Series:FN258 RoHS Compliant: Yes |
| 中文描述： | 512MB的GDDR2 SDRAM的 |
| 文件頁數(shù)： | 41/64頁 |
| 文件大?。?/td> | 1420K |
| 代理商： | K4N51163QC-ZC25 |
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- 41 -
Rev 1.5 Oct. 2005
512M gDDR2 SDRAM
K4N51163QC-ZC
Seamless Burst Write Operation: RL = 5, WL = 4, BL=4
The seamless burst write operation is supported by enabling a write command every other clock for BL = 4 operation, every four clocks
for BL = 8 operation. This operation is allowed regardless of same or different banks as long as the banks are activated.
CMD
NOP
NOP
NOP
NOP
NOP
NOP
DQ’s
NOP
CK/CK
T0
T2
T1
T3
T4
T5
T6
T7
T8
DIN A
0
DIN A
1
DIN A
2
DIN A
3
WRITE A0
Post CAS
WL = RL - 1 = 4
DQS
WRITE A1
Post CAS
DIN A
0
DIN A
1
DIN A
2
DIN A
3
Notes:
1. Write burst interrupt function is only allowed on burst of 8. Burst interrupt of 4 is prohibited.
2. Write burst of 8 can only be interrupted by another Write command. Write burst interruption by Read command or Precharge command is prohibited.
3. Write burst interrupt must occur exactly two clocks after previous Write command. Any other Write burst interrupt timings are prohibited.
4. Write burst interruption is allowed to any bank inside DRAM.
5. Write burst with Auto Precharge enabled is not allowed to interrupt.
6. Write burst interruption is allowed by another Write with Auto Precharge command.
7. All command timings are referenced to burst length set in the mode register. They are not referenced to actual burst. For example, minimum Write to
Precharge timing is WL+BL/2+tWR where tWR starts with the rising clock after the un-interrupted burst end and not from the end of actual burst end.
Writes intrrupted by a write
Burst write can only be interrupted by another write with 4 bit burst boundary. Any other case of write interrupt is not allowed.
Write Burst Interrupt Timing Example: (CL=3, AL=0, RL=3, WL=2, BL=8)
CK/CK
CMD
DQS/DQS
DQs
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
A0
A1
A2
A3
B0
B1
B2
B3
B5
B6
B7
Write B
Write A
B4
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