參數(shù)資料
型號(hào)： K4N51163QC-ZC25
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： ; Filter Type:RFI; Current Rating:180A; Voltage Rating:480V; Series:FN258 RoHS Compliant: Yes
中文描述： 512MB的GDDR2 SDRAM的
文件頁數(shù)： 43/64頁
文件大?。?/td> 1420K
代理商： K4N51163QC-ZC25
- 43 -
Rev 1.5 Oct. 2005
512M gDDR2 SDRAM
K4N51163QC-ZC
The Precharge Command is used to precharge or close a bank that has been activated. The Precharge Command is triggered when
CS, RAS and WE are low and CAS is high at the rising edge of the clock. The Precharge Command can be used to precharge each
bank independently or all banks simultaneously. Three address bits A10, BA0 and BA1 for 256Mb are used to define which bank to pre-
charge when the command is issued.
Minimum Read to precharge command spacing to the same bank = AL + BL/2 clocks.
For the earliest possible precharge, the precharge command may be issued on the rising edge which is “Additive latency(AL) + BL/2
clocks” after a Read command. A new bank active (command) may be issued to the same bank after the RAS precharge time (t
RP
). A
precharge command cannot be issued until t
RAS
is satisfied.
The minimum Read to Precharge spacing has also to satisfy a minimum analog time from the rising clock edge that initiates the last 4-
bit prefetch of a Read to Precharge command. This time is called tRTP (Read to Precharge). For BL = 4 this is the time from the actual
read (AL after the Read command) to Precharge command. For BL = 8 this is the time from AL + 2 clocks after the Read to the Pre-
charge command.
A10
BA1
BA0
Precharged
Bank(s)
Remarks
LOW
LOW
LOW
Bank 0 only
LOW
LOW
HIGH
Bank 1 only
LOW
HIGH
LOW
Bank 2 only
LOW
HIGH
HIGH
Bank 3 only
HIGH
DON’T CARE
DON’T CARE
All Banks
Bank Selection for Precharge by Address Bits
Burst Read Operation Followed by Precharge
Example 1: Burst Read Operation Followed by Precharge:
RL = 4, AL = 1, CL = 3, BL = 4, t
RTP
<= 2 clocks
CMD
NOP
NOP
Precharge
NOP
DQ’s
NOP
CK/CK
DOUT A
0
DOUT A
1
DOUT A
2
DOUT A
3
READ A
Post CAS
RL =4
DQS
Active
Bank A
> = t
RP
NOP
CL =3
NOP
> = t
RAS
> = t
RTP
T0
T2
T1
T3
T4
T5
T6
T7
T 8
AL + BL/2 clks
AL = 1
CL = 3
Precharge Command
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