參數(shù)資料
型號: K4N51163QC-ZC25
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: ; Filter Type:RFI; Current Rating:180A; Voltage Rating:480V; Series:FN258 RoHS Compliant: Yes
中文描述: 512MB的GDDR2 SDRAM的
文件頁數(shù): 45/64頁
文件大?。?/td> 1420K
代理商: K4N51163QC-ZC25
- 45 -
Rev 1.5 Oct. 2005
512M gDDR2 SDRAM
K4N51163QC-ZC
Example 4: Burst Read Operation Followed by Precharge :
RL = 6, AL = 2, CL = 4, BL = 4, t
RTP
<= 2 clocks
CMD
DQ’s
CK/CK
DOUT A
0
DOUT A
1
DOUT A
2
DOUT A
3
AL = 2
CL =4
RL = 6
DQS
> = t
RP
CL =4
> = t
RAS
T0
T2
T1
T3
T4
T5
T6
T7
T 8
AL + BL/2 Clks
> = t
RTP
Example 5: Burst Read Operation Followed by Precharge :
RL = 4, AL = 0, CL = 4, BL = 8, t
RTP
> 2 clocks
CMD
NOP
DQ’s
CK/CK
DOUT A
0
DOUT A
1
DOUT A
2
DOUT A
3
READ A
Post CAS
AL = 0
CL =4
RL = 4
DQS
> = t
RP
> = t
RAS
T0
T2
T1
T3
T4
T5
T6
T7
T 8
AL + 2 Clks + max{tRTP;2 tCK}*
* : rounded to next integer
DOUT A
4
DOUT A
5
DOUT A
6
DOUT A
8
first 4-bit prefetch
second 4-bit prefetch
> = t
RTP
NOP
NOP
NOP
NOP
Precharge A
READ A
Post CAS
Activate
Bank A
NOP
NOP
NOP
NOP
NOP
Precharge A
Activate
Bank A
NOP
NOP
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