參數(shù)資料
型號: K4N51163QC-ZC2A
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 512Mbit gDDR2 SDRAM
中文描述: 512MB的GDDR2 SDRAM的
文件頁數(shù): 26/64頁
文件大小: 1420K
代理商: K4N51163QC-ZC2A
- 26 -
Rev 1.5 Oct. 2005
512M gDDR2 SDRAM
K4N51163QC-ZC
gDDR2 SDRAM supports driver calibration feature and the flow chart below is an example of sequence. Every calibration mode com-
mand should be followed by “OCD calibration mode exit” before any other command being issued. MRS should be set before entering
OCD impedance adjustment and ODT (On Die Termination) should be carefully controlled depending on system environment.
Start
EMRS: Drive(1)
DQ & DQS High; DQS Low
Test
EMRS :
Enter Adjust Mode
BL=4 code input to all DQs
Inc, Dec, or NOP
EMRS: Drive(0)
DQ & DQS Low; DQS High
Test
EMRS :
Enter Adjust Mode
BL=4 code input to all DQs
Inc, Dec, or NOP
EMRS: OCD calibration mode exit
End
ALL OK
ALL OK
Need Calibration
Need Calibration
EMRS: OCD calibration mode exit
EMRS: OCD calibration mode exit
EMRS: OCD calibration mode exit
EMRS: OCD calibration mode exit
EMRS: OCD calibration mode exit
MRS shoud be set before entering OCD impedance adjustment and ODT should
be
carefully controlled depending on system environment
Off-Chip Driver (OCD) Impedance Adjustment
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