參數(shù)資料
型號： K4N51163QC-ZC36
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 512Mbit gDDR2 SDRAM
中文描述： 512MB的GDDR2 SDRAM的
文件頁數(shù)： 7/64頁
文件大?。?/td> 1420K
代理商： K4N51163QC-ZC36
- 7 -
Rev 1.5 Oct. 2005
512M gDDR2 SDRAM
K4N51163QC-ZC
Note :
1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2. Storage Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions, please refer to JESD51-
2 standard.
Symbol
Parameter
Rating
Units
Notes
VDD
Voltage on VDD pin relative to Vss
- 1.0 V ~ 2.3 V
V
1
VDDQ
Voltage on VDDQ pin relative to Vss
- 0.5 V ~ 2.3 V
V
1
VDDL
Voltage on VDDL pin relative to Vss
- 0.5 V ~ 2.3 V
V
1
V
IN,
V
OUT
Voltage on any pin relative to Vss
- 0.5 V ~ 2.3 V
V
1
T
STG
Storage Temperature
-55 to +100
°
C
1, 2
Note : There is no specific device VDD supply voltage requirement for SSTL-1.8 compliance. However under all conditions VDDQ must be less than or
equal to VDD.
1. The value of VREF may be selected by the user to provide optimum noise margin in the system. Typically the value of VREF is expected to be about
0.5 x VDDQ of the transmitting device and VREF is expected to track variations in VDDQ.
2. Peak to peak AC noise on VREF may not exceed +/-2% VREF(DC).
3. VTT of transmitting device must track VREF of receiving device.
4. AC parameters are measured with VDD, VDDQ and VDDDL tied together.
Symbol
Parameter
Rating
Units
Notes
Min.
Typ.
Max.
VDD
Supply Voltage
1.7
1.8
1.9
V
VDDL
Supply Voltage for DLL
1.7
1.8
1.9
V
4
VDDQ
Supply Voltage for Output
1.7
1.8
1.9
V
4
VREF
Input Reference Voltage
0.49*VDDQ
0.50*VDDQ
0.51*VDDQ
mV
1,2
VTT
Termination Voltage
VREF-0.04
VREF
VREF+0.04
V
3
8.0 AC & DC OPERATING CONDITIONS
8.1 Recommended DC Operating Conditions (SSTL - 1.8)
Note :
1. Operating Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions, please refer to
JESD51.2 standard.
2. At 0 - 85
°
C, operation temperature range are the temperature which all DRAM specification will be supported.
3. At 85 - 95
°
C operation temperature range, doubling refresh commands in frequency to a 32ms period ( tREFI=3.9 us ) is required, and to enter to self
refresh mode at this temperature range, an EMRS command is required to change internal refresh rate.
Symbol
Parameter
Rating
Units
°
C
Note
TOPER
Operating Temperature
0 to 95
1, 2, 3
8.2
Operating Temperature Condition
Input DC Logic Level
Symbol
Input AC Logic Level
Symbol
Parameter
Min.
Max.
Units
Note
V
IH
(DC)
DC input logic high
V
REF
+ 0.125
V
DDQ
+ 0.3
V
V
IL
(DC)
DC input logic low
V
DDQ
- 0.3
V
REF
- 0.125
V
Parameter
Min.
Max.
Units
Note
V
IH
(AC)
AC input logic high
V
REF
+ 0.250
-
V
V
IL
(AC)
AC input logic low
-
V
REF
- 0.250
V
8.3 Input DC & AC Logic Level
7.0 ABSOLUTE MAXIMUM DC RATINGS
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