參數(shù)資料
型號: K4N51163QC-ZC
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 512Mbit gDDR2 SDRAM
中文描述: 512MB的GDDR2 SDRAM的
文件頁數(shù): 48/64頁
文件大?。?/td> 1420K
代理商: K4N51163QC-ZC
- 48 -
Rev 1.5 Oct. 2005
512M gDDR2 SDRAM
K4N51163QC-ZC
Example 1: Burst Read Operation with Auto Precharge:
RL = 4, AL = 1, CL = 3, BL = 8, t
RTP
<= 2 clocks
CMD
NOP
NOP
NOP
NOP
DQ’s
NOP
CK/CK
DOUT A
0
DOUT A
1
DOUT A
2
DOUT A
3
READ A
Post CAS
RL =4
DQS
T0
T2
T1
T3
T4
T5
T6
T7
T 8
AL + BL/2 clks
AL = 1
CL = 3
> = t
RTP
DOUT A
4
DOUT A
5
DOUT A
6
DOUT A
8
first 4-bit prefetch
second 4-bit prefetch
NOP
t
RTP
NOP
Precharge begins here
Activate
Bank A
> = t
RP
Autoprecharge
Example 2: Burst Read Operation with Auto Precharge:
RL = 4, AL = 1, CL = 3, BL = 4, t
RTP
> 2 clocks
CK/CK
T0
T2
T1
T3
T4
T5
T6
T7
T 8
CMD
NOP
NOP
NOP
NOP
DQ’s
NOP
DOUT A
0
DOUT A
1
DOUT A
2
DOUT A
3
READ A
Autoprecharge
Post CAS
RL =4
DQS
> = AL + tRTP + tRP
AL = 1
CL = 3
4-bit prefetch
NOP
t
RTP
NOP
Precharge begins here
Activate
Bank A
t
RP
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