參數(shù)資料
型號(hào): K4R271669B-N(M)CK7
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 256K x 16/18 bit x 32s banks Direct RDRAMTM
中文描述: 256 × 16/18位× 32秒銀行直接RDRAMTM
文件頁(yè)數(shù): 20/20頁(yè)
文件大?。?/td> 306K
代理商: K4R271669B-N(M)CK7
Direct RDRAM
Page 18
K4R271669B/K4R441869B
Version 1.11 Oct. 2000
Center-Bonded uBGA Package
(62 Balls)
Figure 4 shows the form and dimensions of the recom-
mended package for the center-bonded CSP device class
Figure 4: Center-Bonded uBGA Package
Table 19 lists the numerical values corresponding to dimen-
sions shown in Figure 4.
Table 19: Center-Bonded uBGA Package Dimensions
A
B
C
D
E
F
G
H
J
1
2
3
4
5
6
7
D
A
e1
d
E
E1
8
e2
Top
Bottom
Bottom
Bottom
9
10
11
12
Symbol
Parameter
Min
(128Mb/144Mb)
Max
(128Mb/144Mb)
Unit
e1
Ball pitch (x-axis)
1.00
1.00
mm
e2
Ball pitch (y-axis)
0.8
0.8
mm
A
Package body length
11.90
12.10
mm
D
Package body width
10.10
10.30
mm
E
Package total thickness
-
1.00
a
mm
E1
Ball height
0.20
0.30
mm
d
Ball diameter
0.30
0.40
mm
a. The E,MAX parameter for SO-RIMM applications is 0.94mm.
相關(guān)PDF資料
PDF描述
K4R271669B-Nb(M)CcK8 256K x 16/18 bit x 32s banks Direct RDRAMTM
K4R271669B 256K x 16/18 bit x 32s banks Direct RDRAMTM
K4R441869B 256K x 16/18 bit x 32s banks Direct RDRAMTM
K4R441869B-N(M)CG6 256K x 16/18 bit x 32s banks Direct RDRAMTM
K4R441869B-N(M)CK7 256K x 16/18 bit x 32s banks Direct RDRAMTM
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