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參數(shù)資料
| 型號： | K4R271669B-N(M)CK7 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256K x 16/18 bit x 32s banks Direct RDRAMTM |
| 中文描述： | 256 × 16/18位× 32秒銀行直接RDRAMTM |
| 文件頁數(shù)： | 4/20頁 |
| 文件大小： | 306K |
| 代理商： | K4R271669B-N(M)CK7 |
Direct RDRAM
Page 2
K4R271669B/K4R441869B
Version 1.11 Oct. 2000
Pinouts and Definitions
Center-Bonded Devices
These tables shows the pin assignments of the center-bonded
RDRAM package. The top table is for the normal package,
and bottom table is for the mirrored package. The mechan-
ical dimensions of this package are shown in a later section.
Refer to Section "Center-Bonded uBGA Package" on page
18.
Table 1-1: a. Center-Bonded Device (top view for normal package)
12
GND
VDD
VDD
GND
11
10
DQA7
DQA4
CFM
CFMN
RQ5
RQ3
DQB0
DQB4
DQB7
9
GND
VDD
GND
GNDa
VDD
GND
VDD
VDD
GND
8
CMD
DQA5
DQA2
VDDa
RQ6
RQ2
DQB1
DQB5
SIO1
7
6
5
SCK
DQA6
DQA1
VREF
RQ7
RQ1
DQB2
DQB6
SIO0
4
VCMOS
GND
VDD
GND
GND
VDD
GND
GND
VCMOS
3
DQA8
*
DQA3
DQA0
CTMN
CTM
RQ4
RQ0
DQB3
DQB8
*
2
1
GND
VDD
VDD
GND
A
B
C
D
E
F
G
H
J
Table 1-2: a. Center-Bonded Device (top view for mirrored package)
12
GND
VDD
VDD
GND
11
10
DQA8
*
DQA3
DQA0
CTMN
CTM
RQ4
RQ0
DQB3
DQB8
*
9
VCMOS
GND
VDD
GND
GND
VDD
GND
GND
VCMOS
8
SCK
DQA6
DQA1
VREF
RQ7
RQ1
DQB2
DQB6
SIO0
7
6
5
CMD
DQA5
DQA2
VDDa
RQ6
RQ2
DQB1
DQB5
SIO1
4
GND
VDD
GND
GNDa
VDD
GND
VDD
VDD
GND
3
DQA7
DQA4
CFM
CFMN
RQ5
RQ3
DQB0
DQB4
DQB7
2
1
GND
VDD
VDD
GND
A
B
C
D
E
F
G
H
J
For normal package, pin #1(ROW 1, COL A) is
located at the A1 position on the top side and the A1
position is marked by the marker
“
“
.
For mirrored package, pin #1(ROW 1, COL A) is
located at the A1 postion on the top side and the A1
position is marked by the alphabet
“
M
“
.
Chip
Top View
* DQA8/DQB8 are just used for 144Mb RDRAM.
These two pins are NC(No Connection) in 128Mb
RDRAM.
b.
Top marking
example of normal package
b. Top marking example
of mirrored package
COL
ROW
COL
ROW
K4R
xxxx
69B-
N
xxx
SAMSUNG 050
M
K4R
xxxx
69B-
M
xxx
SAMSUNG 050
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| K4R271669B-Nb(M)CcK8 | 256K x 16/18 bit x 32s banks Direct RDRAMTM |
| K4R271669B | 256K x 16/18 bit x 32s banks Direct RDRAMTM |
| K4R441869B | 256K x 16/18 bit x 32s banks Direct RDRAMTM |
| K4R441869B-N(M)CG6 | 256K x 16/18 bit x 32s banks Direct RDRAMTM |
| K4R441869B-N(M)CK7 | 256K x 16/18 bit x 32s banks Direct RDRAMTM |
相關(guān)代理商/技術(shù)參數(shù) |
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| K4R271669D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mbit RDRAM(D-die) |
| K4R271669D-T | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mbit RDRAM(D-die) |
| K4R271669D-TCS8 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mbit RDRAM(D-die) |
| K4R271669E | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mbit RDRAM(E-die) |
| K4R271669F | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mbit RDRAM(F-die) |
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