參數(shù)資料
型號(hào)： K4R271669B-Nb(M)CcK8
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 256K x 16/18 bit x 32s banks Direct RDRAMTM
中文描述： 256 × 16/18位× 32秒銀行直接RDRAMTM
文件頁(yè)數(shù)： 3/20頁(yè)
文件大?。?/td> 306K
代理商： K4R271669B-NB(M)CCK8
Direct RDRAM
Page 1
K4R271669B/K4R441869B
Version 1.11 Oct. 2000
Overview
The Rambus Direct RDRAM is a general purpose high-
performance memory device suitable for use in a broad
range of applications including computer memory, graphics,
video, and any other application where high bandwidth and
low latency are required.
The 128/144-Mbit Direct Rambus DRAMs (RDRAM
) are
extremely high-speed CMOS DRAMs organized as 8M
words by 16 or 18 bits. The use of Rambus Signaling Level
(RSL) technology permits 600MHz to 800MHz transfer
rates while using conventional system and board design
technologies. Direct RDRAM devices are capable of
sustained data transfers at 1.25 ns per two bytes (10ns per
sixteen bytes).
The architecture of the Direct RDRAMs allows the highest
sustained bandwidth for multiple, simultaneous randomly
addressed memory transactions. The separate control and
data buses with independent row and column control yield
over 95% bus efficiency. The Direct RDRAM's 32 banks
support up to four simultaneous transactions.
System oriented features for mobile, graphics and large
memory systems include power management, byte masking,
and x18 organization. The two data bits in the x18 organiza-
tion are general and can be used for additional storage and
bandwidth or for error correction.
Features
Highest sustained bandwidth per DRAM device
- 1.6GB/s sustained data transfer rate
- Separate control and data buses for maximized
efficiency
- Separate row and column control buses for
easy scheduling and highest performance
- 32 banks: four transactions can take place simul-
taneously at full bandwidth data rates
Low latency features
- Write buffer to reduce read latency
- 3 precharge mechanisms for controller flexibility
- Interleaved transactions
Advanced power management:
- Direct RDRAM operates from a 2.5 volt supply
- Multiple low power states allows flexibility in power
consumption versus time to transition to active state
- Power-down self-refresh
Organization: 1Kbyte pages and 32 banks, x 16/18
- x18 organization allows ECC configurations or
increased storage/bandwidth
- x16 organization for low cost applications
Uses Rambus Signaling Level (RSL) for up to 800MHz
operation
The 128/144-Mbit Direct RDRAMs are offered in a CSP
horizontal package suitable for desktop as well as low-
profile add-in card and mobile applications.
Key Timing Parameters/Part Numbers
a.
“
32s
”
- 32 banks which use a
“
split
”
bank architecture
.
b.
“
N
”
- normal package,
“
M
”
- mirrored package.
c.
“
C
”
- RDRAM core uses normal power self refresh.
Figure 1: Direct RDRAM CSP Package
Organization
Speed
Part Number
Bin
I/O
Freq.
MHz
t
RAC
(Row
Time) ns
256Kx16x32s
a
-CK8
800
45
K4R271669B-N
b
(M)C
c
K8
-CK7
711
45
K4R271669B-N(M)CK7
-CG6
600
53.3
K4R271669B-N(M)CG6
256Kx18x32s
a
-CK8
800
45
K4R441869B-N(M)CK8
-CK7
711
45
K4R441869B-N(M)CK7
-CG6
600
53.3
K4R441869B-N(M)CG6
a. Normal Package
b. Mirrored Package
K4R
xxxx
69B-
N
xxx
SAMSUNG 050
M
K4R
xxxx
69B-
M
xxx
SAMSUNG 050
相關(guān)PDF資料
PDF描述
K4R271669B 256K x 16/18 bit x 32s banks Direct RDRAMTM
K4R441869B 256K x 16/18 bit x 32s banks Direct RDRAMTM
K4R441869B-N(M)CG6 256K x 16/18 bit x 32s banks Direct RDRAMTM
K4R441869B-N(M)CK7 256K x 16/18 bit x 32s banks Direct RDRAMTM
K4R441869B-N(M)CK8 256K x 16/18 bit x 32s banks Direct RDRAMTM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K4R271669B-NCG6 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256K x 16/18 bit x 32s banks Direct RDRAMTM
K4R271669B-NCK7 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256K x 16/18 bit x 32s banks Direct RDRAMTM
K4R271669B-NCK8 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256K x 16/18 bit x 32s banks Direct RDRAMTM
K4R271669D 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mbit RDRAM(D-die)
K4R271669D-T 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mbit RDRAM(D-die)
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