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參數(shù)資料
| 型號(hào)： | K4R271669E |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 128Mbit RDRAM(E-die) |
| 中文描述： | 128Mbit的RDRAM（電子模具） |
| 文件頁數(shù)： | 13/20頁 |
| 文件大?。?/td> | 290K |
| 代理商： | K4R271669E |
Page 11
Direct RDRAM
K4R271669E
Version 1.4 July 2002
Electrical Characteristics
Table 10: Electrical Characteristics
Symbol
Parameter and Conditions
Min
Max
Unit
Θ
JC
Junction-to-Case thermal resistance
-
0.5
°
C/Watt
I
REF
V
REF
current @ V
REF,MAX
-10
10
μ
A
I
OH
RSL output high current @ (0
≤
V
OUT
≤
V
DD
)
-10
10
μ
A
I
ALL
RSL I
OL
current @ V
OL
= 0.9V, V
DD,MIN
, T
J,MAXa
30.0
90.0
mA
I
OL
RSL I
OL
current resolution step
-
2.0
mA
r
OUT
Dynamic output impedance @ V
OL
= 0.9V
150
-
I
OL,NOM
RSL I
OL
current @ V
OL
= 1.0V
b,c
26.6
30.6
mA
I
I,CMOS
CMOS input leakage current @ (0
≤
V
I,CMOS
≤
V
CMOS
)
-10.0
10.0
μ
A
V
OL,CMOS
CMOS output voltage @ I
OL,CMOS
= 1.0mA
-
0.3
V
V
OH,CMOS
CMOS output high voltage @ I
OH,CMOS
= -0.25mA
V
CMOS
-0.3
-
V
a. This measurement is made in manual current control mode; i.e. with all output device legs sinking current.
b. This measurement is made in automatic current control mode after at least 64 current control calibration operations to a device and after CCA and
CCB are initialized to a value of 64. This value applies to all DQA and DQB pins.
c. This measurement is made in automatic current control mode in a 25
test system with V
TERM
= 1.714V and V
REF
= 1.357V and with the ASYMA
and ASYMB register fields set to 0.
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