參數資料
型號: K4R271669E
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 128Mbit RDRAM(E-die)
中文描述: 128Mbit的RDRAM(電子模具)
文件頁數: 16/20頁
文件大?。?/td> 290K
代理商: K4R271669E
Page 14
Direct RDRAM
K4R271669E
Version 1.4 July 2002
Timing Characteristics
Table 12: Timing Characteristics
Symbol
Parameter
Min
Max
Unit
Figure(s)
t
Q
CTM-to-DQA/DQB output time @ t
CYCLE
=2.50ns
-0.310
+0.310
ns
Figure 58
t
QR
, t
QF
DQA/DQB output rise and fall times
0.2
0.45
ns
Figure 58
t
Q1
SCK(neg)-to-SIO0 delay @ C
LOAD,MAX
= 20pF (SD read data valid).
-
10
ns
Figure 61
t
HR
SCK(pos)-to-SIO0 delay @ C
LOAD,MAX
= 20pF (SD read data hold).
2
-
ns
Figure 61
t
QR1
, t
QF1
SIO
OUT
rise/fall @ C
LOAD,MAX
= 20pF
-
12
ns
Figure 61
t
PROP1
SIO0-to-SIO1 or SIO1-to-SIO0 delay @ C
LOAD,MAX
= 20pF
-
20
ns
Figure 61
t
NAPXA
NAP exit delay - phase A
-
50
ns
Figure 50
t
NAPXB
NAP exit delay - phase B
-
40
ns
Figure 50
t
PDNXA
PDN exit delay - phase A
-
4
μ
s
Figure 50
t
PDNXB
PDN exit delay - phase B
-
9000
t
CYCLE
Figure 50
t
AS
ATTN-to-STBY power state delay
-
1
t
CYCLE
Figure 48
t
SA
STBY-to-ATTN power state delay
-
0
t
CYCLE
Figure 48
t
ASN
ATTN/STBY-to-NAP power state delay
-
8
t
CYCLE
Figure 49
t
ASP
ATTN/STBY-to-PDN power state delay
-
8
t
CYCLE
Figure 49
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