- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374277 > K4R271669E (SAMSUNG SEMICONDUCTOR CO. LTD.) 128Mbit RDRAM(E-die) PDF資料下載
參數(shù)資料
| 型號(hào)： | K4R271669E |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 128Mbit RDRAM(E-die) |
| 中文描述： | 128Mbit的RDRAM（電子模具） |
| 文件頁數(shù)： | 19/20頁 |
| 文件大小： | 290K |
| 代理商： | K4R271669E |
Page 17
Direct RDRAM
K4R271669E
Version 1.4 July 2002
Capacitance and Inductance
Table 17: RSL Pin Parasitics
Symbol
Parameter and Conditions - RSL pins
Min
Max
Unit
Figure
L
I
RSL effective input inductance
4.0
nH
Figure 63
L
12
Mutual inductance between any DQA or DQB RSL signals
0.6
nH
Figure 63
Mutual inductance between any ROW or COL RSL signals
0.6
L
I
Difference in L
I
value between any RSL pins of a single device.
-
2.0
nH
Figure 63
C
I
RSL effective input capacitance
a
2.0
2.6
pF
Figure 63
C
12
Mutual capacitance between any RSL signals.
-
0.2
pF
Figure 63
C
I
Difference in C
I
value between average of {CTM, CTMN, CFM,
CFMN} and any RSL pins of a single device
0.12
pF
Figure 63
R
I
RSL effective input resistance
4
18
Figure 63
a. This value is a combination of the device IO circuitry and package capacitances measured at VDD=2.5V and f=400MHz with pin biased at 1.4V.
Table 18: CMOS Pin Parasitics
Symbol
Parameter and Conditions - CMOS pins
Min
Max
Unit
Figure
L
I ,CMOS
CMOS effective input inductance
8.0
nH
Figure 63
C
I ,CMOS
CMOS effective input capacitance (SCK,CMD)
a
1.7
2.1
pF
C
I ,CMOS,SIO
CMOS effective input capacitance (SIO1, SIO0)
a
-
7.0
pF
a. This value is a combination of the device IO circuitry and package capacitances.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4R571669D | 256/288Mbit RDRAM(D-die) |
| K4R881869D | 256/288Mbit RDRAM(D-die) |
| K4R761869A-GCN1 | 576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM |
| K4R761869A-GCT9 | 576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM |
| K4R761869A-F | 576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4R271669F | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mbit RDRAM(F-die) |
| K4R271669F-RCS8000 | 制造商:Samsung 功能描述:128 DIRECT RDRAM X16 WBGA - Trays |
| K4R271669F-TCS8000 | 制造商:Samsung 功能描述:128 DIRECT RDRAM X16 WBGA - Trays |
| K4R271669H-DCS8000 | 制造商:Samsung Semiconductor 功能描述:128MRDRAMDIRECT RDRAMX16FBGA - Bulk |
| K4R271669H-DCS8T00 | 制造商:Samsung Semiconductor 功能描述:128MRDRAMDIRECT RDRAMX16FBGA - Tape and Reel |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。