參數(shù)資料
型號(hào): K4R271669E
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 128Mbit RDRAM(E-die)
中文描述: 128Mbit的RDRAM(電子模具)
文件頁(yè)數(shù): 20/20頁(yè)
文件大?。?/td> 290K
代理商: K4R271669E
Page 18
Direct RDRAM
K4R271669E
Version 1.4 July 2002
Center-Bonded Fanout Package
(54 Balls)
Figure 4 shows the form and dimensions of the recom-
mended package for the center-bonded Fanout CSP device
class.
Figure 4: Center-Bonded Fanout CSP Package
Table 19 lists the numerical values corresponding to dimen-
sions shown in Figure 4
5
7
A
B
C
D
E
F
G
H
J
6
4
3
2
D
A
e1
d
E
E1
e2
Top
Bottom
Bottom
Bottom
1
Table 19: Center-Bonded Fanout CSP Package Dimension
Symbol
Parameter
Min
Max
Unit
e1
Ball pitch (x-axis)
1.27
1.27
mm
e2
Ball pitch (y-axis)
1.27
1.27
mm
A
Package body length
11.9
12.1
mm
D
Package body width
11.7
11.9
mm
E
Package total thickness
-
1.25
mm
E1
Ball height
0.45
0.55
mm
d
Ball diameter
0.55
0.65
mm
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