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參數(shù)資料
| 型號(hào)： | K4R271669E |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 128Mbit RDRAM(E-die) |
| 中文描述： | 128Mbit的RDRAM（電子模具） |
| 文件頁數(shù)： | 3/20頁 |
| 文件大?。?/td> | 290K |
| 代理商： | K4R271669E |
Page 1
Direct RDRAM
K4R271669E
Version 1.4 July 2002
Overview
The RDRAM
device is a general purpose high-perfor-
mance memory device suitable for use in a broad range of
applications including communications, graphics, video and
any other application where high bandwidth and low latency
are required.
The 128Mbit RDRAM devices are extremely high-speed
CMOS DRAMs organized as 8M words by 16. The use of
Rambus Signaling Level (RSL) technology permits 800MHz
transfer rate while using conventional system and board
design technologies.
RDRAM devices are capable of sustained data transfers at
1.25 ns per two bytes (10ns per sixteen bytes).
The architecture of the RDRAM devices allows the highest
sustained bandwidth for multiple, simultaneous randomly
addressed memory transactions. The separate control and
data buses with independent row and column control yield
over 95% bus efficiency. The RDRAM device's 32 banks
support up to four simultaneous transactions.
System oriented features for mobile, graphics and communi-
cations include power management and byte masking.
Features
Highest sustained bandwidth per DRAM device
-
GB/s sustained data transfer rate
- Separate control and data buses for maximized
efficiency
- Separate row and column control buses for
easy scheduling and highest performance
- 32 banks: four transactions can take place simul-
taneously at full bandwidth data rates
Low latency features
- Write buffer to reduce read latency
- 3 precharge mechanisms for controller flexibility
- Interleaved transactions
Advanced power management:
- Multiple low power states allows flexibility in power
consumption versus time to transition to active state
- Power-down self-refresh
Organization: 1Kbyte pages and 32 banks
Uses Rambus Signaling Level (RSL) interface
for up
to 800MHz
operation
WBGA package(54 Balls)
The 128Mbit RDRAM devices are offered in a horizontal
center-bond fanout CSP package.
Key Timing Parameters/Part Numbers
Figure 1: Direct RDRAM CSP Package
Organization
Speed
Part Number
Bin
I/O
Freq.
MHz
t
RAC
(Row
Access
Time) ns
256Kx16x32s
a
a.
“
32s
”
- 32 banks which use a
“
split
”
bank architecture.
b.
“
T
”
- Lead free consumer package.
c.
“
R
”
- Leaded consumer package.
-CS8
800
45
K4R271669E-T
b
CS8
K4R271669E-R
c
CS8
256Kx16x32s
-CS8
800
45
K4R271669E
SEC 240
x
CS8
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| K4R571669D | 256/288Mbit RDRAM(D-die) |
| K4R881869D | 256/288Mbit RDRAM(D-die) |
| K4R761869A-GCN1 | 576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM |
| K4R761869A-GCT9 | 576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM |
| K4R761869A-F | 576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4R271669F | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mbit RDRAM(F-die) |
| K4R271669F-RCS8000 | 制造商:Samsung 功能描述:128 DIRECT RDRAM X16 WBGA - Trays |
| K4R271669F-TCS8000 | 制造商:Samsung 功能描述:128 DIRECT RDRAM X16 WBGA - Trays |
| K4R271669H-DCS8000 | 制造商:Samsung Semiconductor 功能描述:128MRDRAMDIRECT RDRAMX16FBGA - Bulk |
| K4R271669H-DCS8T00 | 制造商:Samsung Semiconductor 功能描述:128MRDRAMDIRECT RDRAMX16FBGA - Tape and Reel |
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