參數(shù)資料
型號(hào): K4R441869B
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 256K x 16/18 bit x 32s banks Direct RDRAMTM
中文描述: 256 × 16/18位× 32秒銀行直接RDRAMTM
文件頁數(shù): 6/20頁
文件大小: 306K
代理商: K4R441869B
Direct RDRAM
Page 4
K4R271669B/K4R441869B
Version 1.11 Oct. 2000
Figure 2: 128/144 Mbit(256K x16/18 x32s) Direct RDRAM Block Diagram
Bank 31
DQA8..DQA0
9
1
8
W
1
W
8
Bank 30
Bank 29
Bank 18
Bank 17
Bank 16
Bank 15
Bank 14
Bank 13
Bank 1
Bank 0
S
1
DQB8..DQB0
9
1:8 Demux
1:8 Demux
Packet Decode
COLC
5
3
ROW2..ROW0
COL4..COL0
CTM CTMN
CFM CFMN
2
SCK,CMD
RCLK
TCLK
Control Registers
DC
COP
S
C
BC
MA
MB
DX
XOP
M
BX
DR
R
ROP
AV
BR
8
8
6
5
5
5
5
5
6
9
5
5
11
Write
Buffer
Match
Match
Mux
Match
DM
DEVID
512x64x144
Internal DQB Data Path
Column Decode & Mask
PREC
72
9
9
72
9
REFR
Row Decode
Mux
ACT
RD, WR
Power Modes
DRAM Core
Mux
XOP Decode
PREX
9
9
9
9
72
9
9
9
PRER
COLX
COLM
2
SIO0,SIO1
Sense Amp
32x72
Internal DQA Data Path
Packet Decode
ROWR
ROWA
RCLK
RCLK
R
T
R
T
RQ7..RQ5 or
RQ4..RQ0 or
S
0
S
0
S
1
S
1
S
1
S
1
S
1
S
1
S
2
S
3
S
3
32x72
S
1
72
S
0
S
0
S
1
S
1
S
1
S
1
S
1
S
1
S
2
S
3
S
3
32x72
Bank 2
相關(guān)PDF資料
PDF描述
K4R441869B-N(M)CG6 256K x 16/18 bit x 32s banks Direct RDRAMTM
K4R441869B-N(M)CK7 256K x 16/18 bit x 32s banks Direct RDRAMTM
K4R441869B-N(M)CK8 256K x 16/18 bit x 32s banks Direct RDRAMTM
K4R271669E 128Mbit RDRAM(E-die)
K4R571669D 256/288Mbit RDRAM(D-die)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K4R441869B-MCG6 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256K x 16/18 bit x 32s banks Direct RDRAMTM
K4R441869B-MCK7 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256K x 16/18 bit x 32s banks Direct RDRAMTM
K4R441869B-MCK8 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256K x 16/18 bit x 32s banks Direct RDRAMTM
K4R441869B-N(M)CG6 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256K x 16/18 bit x 32s banks Direct RDRAMTM
K4R441869B-N(M)CK7 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256K x 16/18 bit x 32s banks Direct RDRAMTM