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參數(shù)資料
| 型號(hào)： | K4R571669D |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256/288Mbit RDRAM(D-die) |
| 中文描述： | 256/288Mbit的RDRAM（深模） |
| 文件頁數(shù)： | 3/20頁 |
| 文件大?。?/td> | 311K |
| 代理商： | K4R571669D |
Direct RDRAM
K4R571669D/K4R881869D
Page 1
Version 1.4 July 2002
Overview
The RDRAM
device is a general purpose high-perfor-
mance memory device suitable for use in a broad range of
applications including computer memory, graphics, video,
and any other application where high bandwidth and low
latency are required.
The 256/288-Mbit RDRAM devices are extremely high-
speed CMOS DRAMs organized as 16M words by 16 or 18
bits. The use of Rambus Signaling Level (RSL) technology
permits up to 1066 MHz transfer rates while using conven-
tional system and board design technologies. RDRAM
devices are capable of sustained data transfers up to 0.938ns
per two bytes (7.5ns per sixteen bytes).
The architecture of RDRAM devices allows the highest
sustained bandwidth for multiple, simultaneous randomly
addressed memory transactions. The separate control and
data buses with independent row and column control yield
over 95% bus efficiency. The RDRAM device's 32 banks
support up to four simultaneous transactions.
System oriented features for mobile, graphics and large
memory systems include power management, byte masking,
and x18 organization. The two data bits in the x18 organiza-
tion are general and can be used for additional storage and
bandwidth or for error correction.
Features
Highest sustained bandwidth per DRAM device
- 2.1GB/s sustained data transfer rate
- Separate control and data buses for maximized
efficiency
- Separate row and column control buses for
easy scheduling and highest performance
- 32 banks: four transactions can take place simul-
taneously at full bandwidth data rates
Low latency features
- Write buffer to reduce read latency
- 3 precharge mechanisms for controller flexibility
- Interleaved transactions
Advanced power management:
- Multiple low power states allows flexibility in power
consumption versus time to transition to active state
- Power-down self-refresh
Organization: 2kbyte pages and 32 banks, x 16/18
- x18 organization allows ECC configurations or
increased storage/bandwidth
- x16 organization for low cost applications
Uses Rambus Signaling Level (RSL) for up to 1066MHz
operation
The 256/288-Mbit RDRAM devices are offered in a CSP
horizontal package suitable for desktop as well as low-
profile add-in card and mobile applications.
Key Timing Parameters/Part Numbers
a.
“
32s
”
- 32 banks which use a
“
split
”
bank architecture
.
b.
“
F
”
- WBGA package.
c.
“
C
”
- RDRAM core uses normal power self refresh.
Figure 1: Direct RDRAM CSP Package
Organization
Speed
Part Number
Bin
I/O
Freq.
MHz
t
(Row
Access
Time) ns
512Kx16x32s
a
-CT9
1066
32P
K4R571669D-F
b
C
c
T9
-CN9
1066
32
K4R571669D-FCN9
-CM9
1066
35
K4R571669D-FCM9
-CM8
800
40
K4R571669D-FCM8
-CK8
800
45
K4R571669D-FCK8
512Kx18x32s
-CT9
1066
32P
K4R881869D-FCT9
-CN9
1066
32
K4R881869D-FCN9
-CM9
1066
35
K4R881869D-FCM9
-CM8
800
40
K4R881869D-FCM8
-CK8
800
45
K4R881869D-FCK8
K4RXXXX69D-
F
xxx
SAMSUNG 230
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4R881869D | 256/288Mbit RDRAM(D-die) |
| K4R761869A-GCN1 | 576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM |
| K4R761869A-GCT9 | 576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM |
| K4R761869A-F | 576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM |
| K4R761869A-FbCcN1 | 576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4R761869A-F | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM |
| K4R761869A-FBCCN1 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM |
| K4R761869A-FCM8 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM |
| K4R761869A-FCT9 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM |
| K4R761869A-GCM8 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM |
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