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參數(shù)資料
| 型號(hào)： | K4R761869A-GCM8 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM |
| 中文描述： | 576Mbit的RDRAM（一模）100萬x 18位x 32秒銀行直接RDRAMTM |
| 文件頁數(shù)： | 4/20頁 |
| 文件大小： | 313K |
| 代理商： | K4R761869A-GCM8 |
Direct RDRAM
Page 2
Version 1.41 Jan. 2004
K4R761869A
COL
ROW
Pinouts and Definitions
Center-Bonded Devices
These tables shows the pin assignments of the center-bonded
RDRAM package. The mechanical dimensions of this
package are shown in a later section. Refer to Section
“
Center-Bonded WBGA Package
”
on page 18. Note - pin #1
is at the A1 position.
Table 1: Center-Bonded Device (top view)
10
V
DD
GND
V
DD
GND
V
DD
V
DD
V
DD
V
DD
GND
V
DD
9
8
GND
V
DD
CMD
V
DD
GND
GNDa
GNDa
V
DD
V
DD
GND
GND
V
DD
V
DD
GND
GND
V
CMOS
V
DD
GND
7
V
DD
DQA8
DQA7
DQA5
DQA3
DQA1
CTMN
CTM
RQ7
RQ5
RQ3
RQ1
DQB1
DQB3
DQB5
DQB7
DQB8
V
DD
6
5
4
GND
GND
DQA6
DQA4
DQA2
DQA0
CFM
CFMN
RQ6
RQ4
RQ2
RQ0
DQB0
DQB2
DQB4
DQB6
GND
GND
3
V
DD
GND
SCK
V
CMOS
GND
V
DD
GND
V
DDa
V
REF
GND
V
DD
GND
GND
V
DD
SIO0
SIO1
GND
V
DD
2
1
V
DD
GND
GND
V
DD
GND
GND
GND
GND
GND
V
DD
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
S
T
U
Chip
Top View
The pin #1(ROW 1, COL A) is located at the
A1 position on the top side and the A1 position
is marked by the marker
“
”
.
K4R761869A-
x
Cxx
SAMSUNG
320
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4R881869 | 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM |
| K4R881869M | 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM |
| K4R881869M-NbCcG6 | 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM |
| K4R881869M-NCK7 | 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM |
| K4R881869M-NCK8 | 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4R761869A-GCN1 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM |
| K4R761869A-GCT9 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM |
| K4R761869A-GCT9000 | 制造商:Samsung Semiconductor 功能描述:512 DIRECT RDRAM X18 WBGA - Trays |
| K4R881869 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM |
| K4R881869D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256/288Mbit RDRAM(D-die) |
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