- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374277 > K4R761869A-GCN1 (SAMSUNG SEMICONDUCTOR CO. LTD.) 576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM PDF資料下載
參數(shù)資料
| 型號： | K4R761869A-GCN1 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM |
| 中文描述： | 576Mbit的RDRAM（一模）100萬x 18位x 32秒銀行直接RDRAMTM |
| 文件頁數(shù)： | 13/20頁 |
| 文件大?。?/td> | 313K |
| 代理商： | K4R761869A-GCN1 |
Direct RDRAM
Page 11
K4R761869A
Version 1.41 Jan. 2004
Electrical Characteristics
Table 10: Electrical Characteristics
Symbol
Parameter and Conditions
Min
Max
Unit
Θ
JC
Junction-to-Case thermal resistance
-
0.5
°
C/Watt
I
REF
V
REF
current @ V
REF,MAX
-10
10
μ
A
I
OH
RSL output high current @ (0
≤
V
OUT
≤
V
DD
)
-10
10
μ
A
I
ALL
RSL I
OL
current @ t
CYCLE
= 1.667ns V
OL
= 0.9V, V
DD,MIN
, T
J,MAXa
a. This measurement is made in manual current control mode; i.e. with all output device legs sinking current.
b. This measurement is made in automatic current control mode after at least 64 current control calibration operations to a device and after CCA and
CCB are initialized to a value of 64. This value applies to all DQA and DQB pins.
c. This measurement is made in automatic current control mode in a 25
test system with V
TERM
= 1.714V and V
REF
= 1.357V and with the ASYMA
and ASYMB register fields set to 0.
32.0
90.0
mA
RSL I
OL
current @ t
CYCLE
= 1.875ns V
OL
= 0.9V, V
DD,MIN
, T
J,MAXa
32.0
90.0
RSL I
OL
current @ t
CYCLE
=2.50ns V
OL
= 0.9V, V
DD,MIN
, T
J,MAXa
30.0
90.0
I
OL
RSL I
OL
current resolution step
-
1.5
mA
r
OUT
Dynamic output impedance @ V
OL
= 0.9V
150
-
I
OL,NOM
RSL I
OL
current @ V
OL
= 1.0V
b,c
@ t
CYCLE
=1.667ns
27.1
30.1
mA
RSL I
OL
current @ V
OL
= 1.0V
b,c
@ t
CYCLE
=1.875ns
27.1
30.1
RSL I
OL
current @ V
OL
= 1.0V
b,c
@ t
CYCLE
=2.5ns
26.6
30.6
I
I,CMOS
CMOS input leakage current @ (0
≤
V
I,CMOS
≤
V
CMOS
)
-10.0
10.0
μ
A
V
OL,CMOS
CMOS output voltage @ I
OL,CMOS
= 1.0mA
-
0.3
V
V
OH,CMOS
CMOS output high voltage @ I
OH,CMOS
= -0.25mA
V
CMOS
-0.3
-
V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4R761869A-GCT9 | 576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM |
| K4R761869A-F | 576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM |
| K4R761869A-FbCcN1 | 576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM |
| K4R761869A-FCM8 | 576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM |
| K4R761869A-FCT9 | 576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4R761869A-GCT9 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM |
| K4R761869A-GCT9000 | 制造商:Samsung Semiconductor 功能描述:512 DIRECT RDRAM X18 WBGA - Trays |
| K4R881869 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM |
| K4R881869D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256/288Mbit RDRAM(D-die) |
| K4R881869D-FCM8 | 制造商:Samsung Electro-Mechanics 功能描述:16M X 18 DIRECT RAMBUS DRAM, PBGA92 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。