參數(shù)資料
型號(hào)： K4R761869A-GCT9
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM
中文描述： 576Mbit的RDRAM（一模）100萬(wàn)x 18位x 32秒銀行直接RDRAMTM
文件頁(yè)數(shù)： 3/20頁(yè)
文件大?。?/td> 313K
代理商： K4R761869A-GCT9
Direct RDRAM
Page 1
K4R761869A
Version 1.41 Jan. 2004
Overview
The RDRAM
device is a general purpose high-perfor-
mance memory device suitable for use in a broad range of
applications including computer memory, graphics, video,
and any other application where high bandwidth and low
latency are required.
The 576Mbit RDRAM devices are extremely high-speed
CMOS DRAMs organized as 32M words by 18 bits. The use
of Rambus Signaling Level (RSL) technology permits up to
1200 MHz transfer rates while using conventional system
and board design technologies. RDRAM devices are capable
of sustained data transfers up to 0.833ns per two bytes (6.7ns
per sixteen bytes).
The architecture of RDRAM devices allows the highest
sustained bandwidth for multiple, simultaneous randomly
addressed memory transactions. The separate control and
data buses with independent row and column control yield
over 95% bus efficiency. The RDRAM device's 32 banks
support up to four simultaneous transactions.
System oriented features for mobile, graphics and large
memory systems include power management, byte masking,
and x18 organization. The two data bits in the x18 organiza-
tion are general and can be used for additional storage and
bandwidth or for error correction.
Features
Highest sustained bandwidth per DRAM device
- 2.4GB/s sustained data transfer rate
- Separate control and data buses for maximized
efficiency
- Separate row and column control buses for
easy scheduling and highest performance
- 32 banks: four transactions can take place simul-
taneously at full bandwidth data rates
Low latency features
- Write buffer to reduce read latency
- 3 precharge mechanisms for controller flexibility
- Interleaved transactions
Advanced power management:
- Multiple low power states allows flexibility in power
consumption versus time to transition to active state
- Power-down self-refresh
Organization: 2kbyte pages and 32 banks, x18
- x18 organization allows ECC configurations or
increased storage/bandwidth
Uses Rambus Signaling Level (RSL) for up to 1200MHz
operation
The 576Mbit RDRAM devices are offered in a CSP hori-
zontal package suitable for desktop as well as low-profile
add-in card and mobile applications.
Key Timing Parameters/Part Numbers
Figure 1: Direct RDRAM CSP Package
Organization
Speed
Part Number
Bin
I/O
Freq.
MHz
t
RAC
(Row
Access
Time) ns
1Mx18x32s
a
a.
“
32s
”
- 32 banks which use a
“
split
”
bank architecture
.
b.
“
F
”
- WBGA package, “G”- WBGA lead free package.
c.
“
C
”
- RDRAM core uses normal power self refresh.
-CN1
1200
32
K4R761869A-F
b
C
c
N1
-CT9
1066
32P
K4R761869A-FCT9
-CM8
800
40
K4R761869A-FCM8
1Mx18x32s
-CN1
1200
32
K4R761869A-GCN1
-CT9
1066
32P
K4R761869A-GCT9
-CM8
800
40
K4R761869A-GCM8
x
K4R761869A-
SAMSUNG 320
Cxx
相關(guān)PDF資料
PDF描述
K4R761869A-F 576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM
K4R761869A-FbCcN1 576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM
K4R761869A-FCM8 576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM
K4R761869A-FCT9 576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM
K4R761869A-GCM8 576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K4R761869A-GCT9000 制造商:Samsung Semiconductor 功能描述:512 DIRECT RDRAM X18 WBGA - Trays
K4R881869 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM
K4R881869D 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256/288Mbit RDRAM(D-die)
K4R881869D-FCM8 制造商:Samsung Electro-Mechanics 功能描述:16M X 18 DIRECT RAMBUS DRAM, PBGA92
K4R881869EFCT9 制造商:Samsung Semiconductor 功能描述:
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