- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374277 > K4R881869 (SAMSUNG SEMICONDUCTOR CO. LTD.) 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM PDF資料下載
參數(shù)資料
| 型號： | K4R881869 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM |
| 中文描述： | 288Mbit RDRAM的為512k × 18位× 2 * 16屬銀行直接RDRAMTM |
| 文件頁數(shù)： | 10/64頁 |
| 文件大?。?/td> | 4084K |
| 代理商： | K4R881869 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁當前第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁
Page 8
Direct RDRAM
K4R881869M
Rev. 0.9 Jan. 2000
Preliminary
Field Encoding Summary
Table 6 shows how the six device address bits are decoded
for the ROWA and ROWR packets. The DR4T and DR4F
encoding merges a fifth device bit with a framing bit. When
neither bit is asserted, the device is not selected. Note that a
broadcast operation is indicated when both bits are set.
Broadcast operation would typically be used for refresh and
power management commands. If the device is selected, the
DM (DeviceMatch) signal is asserted and an ACT or ROP
command is performed.
Table 7 shows the encodings of the remaining fields of the
ROWA and ROWR packets. An ROWA packet is specified
by asserting the AV bit. This causes the specified row of the
specified bank of this device to be loaded into the associated
sense amps.
An ROWR packet is specified when AV is not asserted. An
11 bit opcode field encodes a command for one of the banks
of this device. The PRER command causes a bank and its
two associated sense amps to precharge, so another row or
an adjacent bank may be activated. The REFA (refresh-acti-
vate) command is similar to the ACT command, except the
row address comes from an internal register REFR, and
REFR is incremented at the largest bank address. The REFP
(refresh-precharge) command is identical to a PRER
command.
The NAPR, NAPRC, PDNR, ATTN, and RLXR commands
are used for managing the power dissipation of the RDRAM
and are described in more detail in
“
Power State Manage-
ment
”
on page 38. The TCEN and TCAL commands are
used to adjust the output driver slew rate and they are
described in more detail in
“
Current and Temperature
Control
”
on page 43.
Table 6: Device Field Encodings for ROWA Packet and ROWR Packet
DR4T
DR4F
Device Selection
Device Match signal (DM)
1
1
All devices (broadcast)
DM is set to 1
0
1
One device selected
DM is set to 1 if {DEVID4..DEVID0} == {0,DR3..DR0} else DM is set to 0
1
0
One device selected
DM is set to 1 if {DEVID4..DEVID0} == {1,DR3..DR0} else DM is set to 0
0
0
No packet present
DM is set to 0
Table 7: ROWA Packet and ROWR Packet Field Encodings
DM
a
AV
ROP10..ROP0 Field
Name
Command Description
10
9
8
7
6
5
4
3
2:0
0
-
-
-
-
-
-
-
-
-
---
-
No operation.
1
1
Row address
ACT
Activate row R8..R0 of bank BR4..BR0 of device and move device to ATTN
b
.
1
0
1
1
0
0
0
x
c
x
x
000
PRER
Precharge bank BR4..BR0 of this device.
1
0
0
0
0
1
1
0
0
x
000
REFA
Refresh (activate) row REFR8..REFR0 of bank BR3..BR0 of device.
Increment REFR if BR4..BR0 = 1111 (see Figure 50).
1
0
1
0
1
0
1
0
0
x
000
REFP
Precharge bank BR4..BR0 of this device after REFA (see Figure 50).
1
0
x
x
0
0
0
0
1
x
000
PDNR
Move this device into the powerdown (PDN) power state (see Figure 47).
1
0
x
x
0
0
0
1
0
x
000
NAPR
Move this device into the nap (NAP) power state (see Figure 47).
1
0
x
x
0
0
0
1
1
x
000
NAPRC
Move this device into the nap (NAP) power state conditionally
1
0
x
x
x
x
x
x
x
0
000
ATTN
b
Move this device into the attention (ATTN) power state (see Figure 45).
1
0
x
x
x
x
x
x
x
1
000
RLXR
Move this device into the standby (STBY) power state (see Figure 46).
1
0
0
0
0
0
0
0
0
x
001
TCAL
Temperature calibrate this device (see Figure 52).
1
0
0
0
0
0
0
0
0
x
010
TCEN
Temperature calibrate/enable this device (see Figure 52).
1
0
0
0
0
0
0
0
0
0
000
NOROP
No operation.
a. The DM (Device Match signal) value is determined by the DR4T,DR4F, DR3..DR0 field of the ROWA and ROWR packets. See Table 6.
b. The ATTN command does not cause a RLX-to-ATTN transition for a broadcast operation (DR4T/DR4F=1/1).
c. An
”
x
”
entry indicates which commands may be combined. For instance, the three commands PRER/NAPRC/RLXR may be specified in one ROP value (011000111000).
相關PDF資料 |
PDF描述 |
|---|---|
| K4R881869M | 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM |
| K4R881869M-NbCcG6 | 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM |
| K4R881869M-NCK7 | 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM |
| K4R881869M-NCK8 | 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM |
| K4S280432A | 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| K4R881869D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256/288Mbit RDRAM(D-die) |
| K4R881869D-FCM8 | 制造商:Samsung Electro-Mechanics 功能描述:16M X 18 DIRECT RAMBUS DRAM, PBGA92 |
| K4R881869EFCT9 | 制造商:Samsung Semiconductor 功能描述: |
| K4R881869E-GCM8000 | 制造商:Samsung Semiconductor 功能描述:DRAM CHIP DIRECT RDRAM 288MBIT 2.5V 92PIN WBGA - Bulk |
| K4R881869E-GCM8T00 | 制造商:Samsung Semiconductor 功能描述:288MRDRAMDIRECT RDRAMX18WBGA - Tape and Reel |
發(fā)布緊急采購，3分鐘左右您將得到回復。