參數(shù)資料
型號(hào)： K4R881869D
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 256/288Mbit RDRAM(D-die)
中文描述： 256/288Mbit的RDRAM（深模）
文件頁(yè)數(shù)： 17/20頁(yè)
文件大小： 311K
代理商： K4R881869D
Direct RDRAM
K4R571669D/K4R881869D
Page 15
Version 1.4 July 2002
Timing Parameters
Table 13: Timing Parameter Summary
Parameter
Description
Min
-32P
-1066
Min
-32
-1066
Min
-35
-1066
Min
-40
-800
Min
-45
-800
Max
Units
Figure(s)
t
RC
Row Cycle time of RDRAM banks -the interval between ROWA pack-
ets with ACT commands to the same bank.
28
28
32
28
28
-
t
CYCLE
Figure 16
Figure 17
t
RAS
RAS-asserted time of RDRAM bank - the interval between ROWA
packet with ACT command and next ROWR packet with PRER
a
com-
mand to the same bank.
20
20
22
20
20
64
μ
s
b
t
CYCLE
Figure 16
Figure 17
t
RP
Row Precharge time of RDRAM banks - the interval between ROWR
packet with PRER
a
command and next ROWA packet with ACT com-
mand to the same bank.
8
8
10
8
8
-
t
CYCLE
Figure 16
Figure 17
t
PP
Precharge-to-precharge time of RDRAM device - the interval between
successive ROWR packets with PRER
a
commands to any banks of the
same device.
8
8
8
8
8
-
t
CYCLE
Figure 13
t
RR
RAS-to-RAS time of RDRAM device - the interval between successive
ROWA packets with ACT commands to any banks of the same device.
8
8
8
8
8
-
t
CYCLE
Figure 14
t
RCD
RAS-to-CAS Delay - the interval from ROWA packet with ACT com-
mand to COLC packet with RD or WR command). Note - the RAS-to-
CAS delay seen by the RDRAM core (t
RCD-C
) is equal to t
RCD-C
= 1 +
t
RCD
because of differences in the row and column paths through the
RDRAM interface.
9
9
9
7
9
-
t
CYCLE
Figure 16
Figure 17
t
CAC
CAS Access delay - the interval from RD command to Q read data. The
equation for t
CAC
is given in the TPARM register in Figure 40.
8
9
9
8
8
12
t
CYCLE
Figure 5
Figure 40
t
CWD
CAS Write Delay (interval from WR command to D write data.
6
6
6
6
6
6
t
CYCLE
Figure 5
t
CC
CAS-to-CAS time of RDRAM bank - the interval between successive
COLC commands).
4
4
4
4
4
-
t
CYCLE
Figure 16
Figure 17
t
PACKET
Length of ROWA, ROWR, COLC, COLM or COLX packet.
4
4
4
4
4
4
t
CYCLE
Figure 3
t
RTR
Interval from COLC packet with WR command to COLC packet which
causes retire, and to COLM packet with bytemask.
8
8
8
8
8
-
t
CYCLE
Figure 18
t
OFFP
The interval (offset) from COLC packet with RDA command, or from
COLC packet with retire command (after WRA automatic precharge),
or from COLC packet with PREC command, or from COLX packet
with PREX command to the equivalent ROWR packet with PRER. The
equation for t
OFFP
is given in the TPARM register in Figure 40.
4
4
4
4
4
4
t
CYCLE
Figure 15
Figure 40
t
RDP
Interval from last COLC packet with RD command to ROWR packet
with PRER.
4
4
4
4
4
-
t
CYCLE
Figure 16
t
RTP
Interval from last COLC packet with automatic retire command to
ROWR packet with PRER.
4
4
4
4
4
-
t
CYCLE
Figure 17
a. Or equivalent PREC or PREX command. See Figure 15.
b. This is a constraint imposed by the core, and is therefore in units of
μ
s rather than t
CYCLE
.
相關(guān)PDF資料
PDF描述
K4R761869A-GCN1 576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM
K4R761869A-GCT9 576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM
K4R761869A-F 576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM
K4R761869A-FbCcN1 576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM
K4R761869A-FCM8 576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K4R881869D-FCM8 制造商:Samsung Electro-Mechanics 功能描述:16M X 18 DIRECT RAMBUS DRAM, PBGA92
K4R881869EFCT9 制造商:Samsung Semiconductor 功能描述:
K4R881869E-GCM8000 制造商:Samsung Semiconductor 功能描述:DRAM CHIP DIRECT RDRAM 288MBIT 2.5V 92PIN WBGA - Bulk
K4R881869E-GCM8T00 制造商:Samsung Semiconductor 功能描述:288MRDRAMDIRECT RDRAMX18WBGA - Tape and Reel
K4R881869E-GCT9000 制造商:Samsung Semiconductor 功能描述:288MRDRAMDIRECT RDRAMX18WBGA - Bulk
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*