- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374277 > K4R881869M-NbCcG6 (SAMSUNG SEMICONDUCTOR CO. LTD.) 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM PDF資料下載
參數(shù)資料
| 型號(hào)： | K4R881869M-NbCcG6 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM |
| 中文描述： | 288Mbit RDRAM的為512k × 18位× 2 * 16屬銀行直接RDRAMTM |
| 文件頁數(shù)： | 36/64頁 |
| 文件大小： | 4084K |
| 代理商： | K4R881869M-NBCCG6 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁當(dāng)前第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁
Page 34
Direct RDRAM
K4R881869M
Rev. 0.9 Jan. 2000
Preliminary
Figure 32: REFB Register
Figure 33: CCA Register
15 14 13 12 11 10
9
8
7
6
5
4
3
2
1
0
Read/write register.
Reset value is zero (from SETR/CLRR).
Refresh Bank register.
REFB4..REFB0 is the bank that will be refreshed next
during self-refresh. REFB4..0 is incremented after each
self-refresh activate and precharge operation pair.
Control Register: REFB
Address: 041
16
0
0
0
0
0
0
0
0
0
0
0
0
REFB4..REFB0
15 14 13 12 11 10
9
8
7
6
5
4
3
2
1
0
Read/write register.
Reset value is zero (SETR/CLRR or SIO Reset).
CCA6..CCA0 - Current Control A. Controls the I
OL
output current for the DQA8..DQA0 pins.
ASYMB0 control the asymmetry of the V
OL
/V
OH
voltage swing about the V
REF
reference voltage for the
DQA8..0 pins.
Control Register: CCA
Address: 043
16
0
0
0
0
0
0
0
0
CCA6..CCA0
.0
ASYMA
0
Figure 34: REFR Register
Figure 35: CCB Register
15 14 13 12 11 10
9
8
7
6
5
4
3
2
1
0
Read/write register.
Reset value is zero (from SETR/CLRR).
Refresh Row register.
REFR8..REFR0 is the row that will be refreshed next
by the REFA command or by self-refresh. REFR8..0 is
incremented when BR4..0=11111 for the REFA
command. REFR8..0 is incremented when
REFB4..0=11111 for self-refresh.
Control Register: REFR
Address: 042
16
0
0
0
0
0
0
0
REFR8..REFR0
15 14 13 12 11 10
9
8
7
6
5
4
3
2
1
0
Read/write register.
Reset value is zero (SETR/CLRR or SIO Reset).
CCB6..CCB0 - Current Control B. Controls the I
OL
output current for the DQB8..DQB0 pins.
ASYMB0 control the asymmetry of the V
OL
/V
OH
voltage swing about the V
REF
reference voltage for the
DQB8..0 pins.
Control Register: CCB
Address: 044
16
0
0
0
0
0
0
0
0
CCB6..CCB0
..0
ASYMB
0
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4R881869M-NCK7 | 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM |
| K4R881869M-NCK8 | 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM |
| K4S280432A | 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL |
| K4S280432C | 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL |
| K4S280432F-UC | 128Mb F-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4R881869M-NCK7 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM |
| K4R881869M-NCK8 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM |
| K4R881869M-NCK8000 | 制造商:Samsung SDI 功能描述: |
| K4S160822D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL |
| K4S160822DT-G/F10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。