參數(shù)資料
型號: K4R881869M-NCK7
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM
中文描述: 288Mbit RDRAM的為512k × 18位× 2 * 16屬銀行直接RDRAMTM
文件頁數(shù): 6/64頁
文件大小: 4084K
代理商: K4R881869M-NCK7
Page 4
Direct RDRAM
K4R881869M
Rev. 0.9 Jan. 2000
Preliminary
Figure 2: 288 Mbit Direct RDRAM Block Diagram
Bank 31
DQA8..DQA0
9
1
8
W
1
W
8
Bank 30
Bank 29
Bank 18
Bank 17
Bank 16
Bank 15
Bank 14
Bank 13
Bank 1
Bank 0
S
1
DQB8..DQB0
9
1:8 Demux
1:8 Demux
Packet Decode
COLC
5
3
ROW2..ROW0
COL4..COL0
CTM CTMN
CFM CFMN
2
SCK,CMD
RCLK
TCLK
Control Registers
DC
COP
S
C
BC
MA
MB
DX
XOP
M
BX
DR
R
ROP
AV
BR
8
8
7
5
5
5
5
5
6
9
5
5
11
Write
Buffer
Match
Match
Mux
Match
DM
DEVID
512x128x144
Internal DQB Data Path
Column Decode & Mask
PREC
72
9
9
72
9
REFR
Row Decode
Mux
ACT
RD, WR
Power Modes
DRAM Core
Mux
XOP Decode
PREX
9
9
9
9
72
9
9
9
PRER
COLX
COLM
2
SIO0,SIO1
Sense Amp
64x72
Internal DQA Data Path
Packet Decode
ROWR
ROWA
RCLK
RCLK
R
T
R
T
RQ7..RQ5 or
RQ4..RQ0 or
S
0
S
0
S
p
1
S
1
S
1
S
1
S
1
S
1
S
2
S
3
S
3
64x72
S
1
72
S
0
S
0
S
1
S
1
S
1
S
1
S
1
S
1
S
2
S
3
S
3
64x72
Bank 2
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