參數(shù)資料
型號: K4R881869M-NCK8
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM
中文描述: 288Mbit RDRAM的為512k × 18位× 2 * 16屬銀行直接RDRAMTM
文件頁數(shù): 60/64頁
文件大?。?/td> 4084K
代理商: K4R881869M-NCK8
Page 58
Direct RDRAM
K4R881869M
Rev. 0.9 Jan. 2000
Preliminary
Center-Bonded uBGA Package
Figure 61 shows the form and dimensions of the recom-
mended package for the center-bonded CSP device class.
Figure 61: Center-Bonded uBGA Package
Table 27 lists the numerical values corresponding to dimen-
sions shown in Figure 61.
Table 27: Center-Bonded uBGA Package Dimensions
A
B
C
D
E
F
G
H
J
1
2
3
4
5
6
7
D
E
E1
8
Bottom
9
10
K
L
M
N
P
R
S
Y
U
Top
Bottom
A
Bottom
e1
d
e2
Symbol
Parameter
Min
Max
Unit
e1
Ball pitch (x-axis)
0.80
0.80
mm
e2
Ball pitch (y-axis)
0.80
0.80
mm
A
Package body length
10.40
10.60
mm
D
Package body width
17.40
17.60
mm
E
Package total thickness
-
1.00
a
mm
E1
Ball height
0.20
0.30
mm
d
Ball diameter
0.30
0.40
mm
a. The E,MAX parameter for SO-RIMM applications is 0.94mm.
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