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參數(shù)資料
| 型號： | K4S51153PF-YF90 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
| 中文描述： | 8米× 16 × 4銀行在54FBGA移動SDRAM |
| 文件頁數(shù)： | 8/12頁 |
| 文件大?。?/td> | 108K |
| 代理商： | K4S51153PF-YF90 |
K4S51153PF - Y(P)F
September 2004
8
Mobile SDRAM
AC CHARACTERISTICS
(AC operating conditions unless otherwise noted)
NOTES :
1. Parameters depend on programmed CAS latency.
2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.
3. Assumed input rise and fall time (tr & tf) = 1ns.
If tr & tf is longer than 1ns, transient time compensation should be considered,
i.e., [(tr + tf)/2-1]ns should be added to the parameter.
Parameter
Symbol
-75
-90
-1L
Unit
Note
Min
Max
Min
Max
Min
Max
CLK cycle time
CAS latency=3
t
CC
7.5
1000
9
1000
9
1000
ns
1
CAS latency=2
t
CC
12
12
15
CAS latency=1
t
CC
-
-
25
CLK to valid output delay
CAS latency=3
t
SAC
6
7
7
ns
1,2
CAS latency=2
t
SAC
9
9
10
CAS latency=1
t
SAC
-
-
20
Output data hold time
CAS latency=3
t
OH
2.0
2.0
2.0
ns
2
CAS latency=2
t
OH
2.0
2.0
2.0
CAS latency=1
t
OH
-
-
2.0
CLK high pulse width
t
CH
2.5
3.0
3.0
ns
3
CLK low pulse width
t
CL
2.5
3.0
3.0
ns
3
Input setup time
t
SS
2.0
2.0
2.0
ns
3
Input hold time
t
SH
1
1
1.5
ns
3
CLK to output in Low-Z
t
SLZ
1
1
1
ns
2
CLK to output in Hi-Z
CAS latency=3
t
SHZ
6
7
7
ns
CAS latency=2
9
9
10
CAS latency=1
-
-
20
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相關代理商/技術參數(shù) |
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|---|---|
| K4S51153PF-YPF | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
| K4S51153PF-YPF1L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
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| K4S511632B-TC75 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb B-die SDRAM Specification |
| K4S511632B-TCL75 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb B-die SDRAM Specification |
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