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參數資料
| 型號： | K4S511633C-YL |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 32Mx16 Mobile SDRAM 54CSP 1/CS |
| 中文描述： | 32Mx16移動SDRAM 54CSP 1/CS |
| 文件頁數： | 7/8頁 |
| 文件大小： | 61K |
| 代理商： | K4S511633C-YL |
K4S511633C-YL/N/P
Rev. 1.2 Dec. 2002
CMOS SDRAM
AC CHARACTERISTICS
(AC operating conditions unless otherwise noted)
Notes :
1. Parameters depend on programmed CAS latency.
2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.
3. Assumed input rise and fall time (tr & tf) = 1ns.
If tr & tf is longer than 1ns, transient time compensation should be considered,
i.e., [(tr + tf)/2-1]ns should be added to the parameter.
Parameter
Symbol
-80
-1H
-1L
Unit
Note
Min
Max
Min
Max
Min
Max
CLK cycle time
CAS latency=3
t
CC
8
1000
10
1000
10
1000
ns
1
CAS latency=2
10
10
12
CAS latency=1
-
-
25
CLK to valid output delay
CAS latency=3
t
SAC
6
7
7
ns
1,2
CAS latency=2
7
7
8
CAS latency=1
-
-
20
Output data hold time
CAS latency=3
t
OH
2.5
2.5
2.5
ns
2
CAS latency=2
2.5
2.5
2.5
CAS latency=1
-
-
2.5
CLK high pulse width
t
CH
2.5
3
3
ns
3
CLK low pulse width
t
CL
2.5
3
3
ns
3
Input setup time
t
SS
2.0
2.5
2.5
ns
3
Input hold time
t
SH
1.0
1.5
1.5
ns
3
CLK to output in Low-Z
t
SLZ
1
1
1
ns
2
CLK to output in Hi-Z
CAS latency=3
t
SHZ
6
7
7
ns
CAS latency=2
7
7
8
CAS latency=1
-
-
20
Notes :
1. This is to advise Samsung customers that, in accordance with certain terms of an agreement, Samsung is prohibited from
selling any DRAM products configured in "Multi-Die Plastic" format for use as components in general and scientific computers,
such as mainframes, servers, work stations or desk top personal computers (hereinafter "Prohibited Computer Use").
Applications such as mobile, including cell phones, telecom, including televisions and display monitors, or non-desktop
computer systems, including laptops, notebook computers, are, however, permissible. "Multi-Die Plastic" is defined as two or
more DRAM die encapsulated within a single plastic leaded package.
2. Samsung are not designed or manufactured for use in a device or system that is used under circumstance in which human life
is potentially at stake. Please contact to the memory marketing team in samsung electronics when considering the use of
a product contained herein for any specific purpose, such as medical, aerospace, nuclear, military, vehicular or undersea
repeater use.
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| K4S511633F-F1H | 8M x 16Bit x 4 Banks Mobile SDRAM |
| K4S511633F-F1L | 8M x 16Bit x 4 Banks Mobile SDRAM |
| K4S511633F-F75 | 8M x 16Bit x 4 Banks Mobile SDRAM |
| K4S511633F-L | 8M x 16Bit x 4 Banks Mobile SDRAM |
| K4S511633F-YC | 8M x 16Bit x 4 Banks Mobile SDRAM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| K4S511633C-YL/N1H | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32Mx16 Mobile SDRAM 54CSP 1/CS |
| K4S511633C-YL/N1L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32Mx16 Mobile SDRAM 54CSP 1/CS |
| K4S511633C-YL/N80 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32Mx16 Mobile SDRAM 54CSP 1/CS |
| K4S511633F | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 16Bit x 4 Banks Mobile SDRAM |
| K4S511633F-F1H | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 16Bit x 4 Banks Mobile SDRAM |
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