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參數(shù)資料
| 型號： | K4S511633F-YC |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 8M x 16Bit x 4 Banks Mobile SDRAM |
| 中文描述： | 8米× 16 × 4銀行移動SDRAM |
| 文件頁數(shù)： | 12/12頁 |
| 文件大小： | 114K |
| 代理商： | K4S511633F-YC |
K4S511633F-Y(P)C/L/F
September 2004
12
Mobile-SDRAM
C. BURST SEQUENCE
1. BURST LENGTH = 4
Initial Address
Sequential
Interleave
A1
A0
0
0
0
1
2
3
0
1
2
3
0
1
1
2
3
0
1
0
3
2
1
0
2
3
0
1
2
3
0
1
1
1
3
0
1
2
3
2
1
0
2. BURST LENGTH = 8
Initial Address
Sequential
Interleave
A2
A1
A0
0
0
0
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
0
0
1
1
2
3
4
5
6
7
0
1
0
3
2
5
4
7
6
0
1
0
2
3
4
5
6
7
0
1
2
3
0
1
6
7
4
5
0
1
1
3
4
5
6
7
0
1
2
3
2
1
0
7
6
5
4
1
0
0
4
5
6
7
0
1
2
3
4
5
6
7
0
1
2
3
1
0
1
5
6
7
0
1
2
3
4
5
4
7
6
1
0
3
2
1
1
0
6
7
0
1
2
3
4
5
6
7
4
5
2
3
0
1
1
1
1
7
0
1
2
3
4
5
6
7
6
5
4
3
2
1
0
相關PDF資料 |
PDF描述 |
|---|---|
| K4S511633F-YPC | 8M x 16Bit x 4 Banks Mobile SDRAM |
| K4S511633F | 8M x 16Bit x 4 Banks Mobile SDRAM |
| K4S513233F-F1H | Mobile SDRAM |
| K4S513233F-F1L | Mobile SDRAM |
| K4S513233F-F75 | Mobile SDRAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| K4S511633F-YL75000 | 制造商:Samsung 功能描述:512 SDRAM X16 FBGA - Trays |
| K4S511633F-YPC | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 16Bit x 4 Banks Mobile SDRAM |
| K4S51163LF-Y(P)C/L/F1L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
| K4S51163LF-Y(P)C/L/F75 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
| K4S51163LF-YPC/L/F1H | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
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