參數(shù)資料
型號: K4S51323LF-MC
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
中文描述: 4米× 32Bit的× 4銀行在90FBGA移動SDRAM
文件頁數(shù): 9/12頁
文件大小: 144K
代理商: K4S51323LF-MC
K4S51323LF - M(E)C/L/F
September 2004
9
Mobile SDRAM
SIMPLIFIED TRUTH TABLE
(V=Valid, X=Don
t Care, H=Logic High, L=Logic Low)
NOTES :
1. OP Code : Operand Code
A0 ~ A12 & BA0 ~ BA1 : Program keys. (@MRS)
2. MRS can be issued only at all banks precharge state.
A new command can be issued after 2 CLK cycles of MRS.
3. Auto refresh functions are the same as CBR refresh of DRAM.
The automatical precharge without row precharge command is meant by "Auto".
Auto/self refresh can be issued only at all banks precharge state.
Partial self refresh can be issued only after setting partial self refresh mode of EMRS.
4. BA0 ~ BA1 : Bank select addresses.
5. During burst read or write with auto precharge, new read/write command can not be issued.
Another bank read/write command can be issued after the end of burst.
New row active of the associated bank can be issued at tRP after the end of burst.
6. Burst stop command is valid at every burst length.
7. DQM sampled at the positive going edge of CLK masks the data-in at that same CLK in write operation (Write DQM latency
is 0), but in read operation, it makes the data-out Hi-Z state after 2 CLK cycles. (Read DQM latency is 2).
COMMAND
CKEn-1 CKEn
CS
RAS
CAS
WE
DQM BA
0,1
A10/AP
A12, A11,
A9 ~ A0
Note
Register
Mode Register Set
H
X
L
L
L
L
X
OP CODE
1, 2
Refresh
Auto Refresh
H
H
L
L
L
H
X
X
3
Self
Refresh
Entry
L
3
Exit
L
H
L
H
H
H
X
X
3
H
X
X
X
3
Bank Active & Row Addr.
H
X
L
L
H
H
X
V
Row Address
Read &
Column Address
Auto Precharge Disable
H
X
L
H
L
H
X
V
L
Column
Address
(A0~A8)
Column
Address
(A0~A8)
4
Auto Precharge Enable
H
4, 5
Write &
Column Address
Auto Precharge Disable
H
X
L
H
L
L
X
V
L
4
Auto Precharge Enable
H
4, 5
Burst Stop
H
X
L
H
H
L
X
X
6
Precharge
Bank Selection
H
X
L
L
H
L
X
V
L
X
All Banks
X
H
Clock Suspend or
Active Power Down
Entry
H
L
H
X
X
X
X
X
L
V
V
V
Exit
L
H
X
X
X
X
X
Precharge Power Down
Mode
Entry
H
L
H
X
X
X
X
X
L
H
H
H
Exit
L
H
H
X
X
X
X
L
V
V
V
DQM
H
X
V
X
7
No Operation Command
H
X
H
X
X
X
X
X
L
H
H
H
相關(guān)PDF資料
PDF描述
K4S51323LF-F1L connector
K4S51323LF-L 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S560432D 16M x 4bit x 4 Banks Synchronous DRAM LVTTL
K4S560432D-TC1H 16M x 4bit x 4 Banks Synchronous DRAM LVTTL
K4S560432D-TC1L 16M x 4bit x 4 Banks Synchronous DRAM LVTTL
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K4S51323P 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 32Bit x 4 Banks Mobile-SDRAM
K4S51323PF-MEF1L 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 32Bit x 4 Banks Mobile-SDRAM
K4S51323PF-MEF75 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 32Bit x 4 Banks Mobile-SDRAM
K4S51323PF-MEF90 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 32Bit x 4 Banks Mobile-SDRAM
K4S51323PF-MF1L 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 32Bit x 4 Banks Mobile-SDRAM