參數(shù)資料
型號(hào)： K4S560432D-TL1H
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 16M x 4bit x 4 Banks Synchronous DRAM LVTTL
中文描述： 16米x 4位× 4銀行同步DRAM LVTTL
文件頁(yè)數(shù)： 8/11頁(yè)
文件大?。?/td> 121K
代理商： K4S560432D-TL1H
K4S560432D
CMOS SDRAM
Rev. 0.0 Jan. 2002
DQ BUFFER OUTPUT DRIVE CHARACTERISTICS
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Notes
Output rise time
trh
Measure in linear
region : 1.2V ~ 1.8V
1.37
4.37
Volts/ns
3
Output fall time
tfh
Measure in linear
region : 1.2V ~ 1.8V
1.30
3.8
Volts/ns
3
Output rise time
trh
Measure in linear
region : 1.2V ~ 1.8V
2.8
3.9
5.6
Volts/ns
1,2
Output fall time
tfh
Measure in linear
region : 1.2V ~ 1.8V
2.0
2.9
5.0
Volts/ns
1,2
1. Rise time specification based on 0pF + 50
to V
SS
, use these values to design to.
2. Fall time specification based on 0pF + 50
to V
DD
, use these values to design to.
3. Measured into 50pF only, use these values to characterize to.
4. All measurements done with respect to V
SS
.
Notes :
AC CHARACTERISTICS
(AC operating conditions unless otherwise noted)
Parameter
Symbol
-7C
-75
-1H
-1L
Unit
Note
Min
Max
Min
Max
Min
Max
Min
Max
CLK cycle time
CAS latency=3
t
CC
7.5
1000
7.5
1000
10
1000
10
1000
ns
1
CAS latency=2
7.5
10
10
12
CLK to valid
output delay
CAS latency=3
t
SAC
5.4
5.4
6
6
ns
1,2
CAS latency=2
5.4
6
6
7
Output data
hold time
CAS latency=3
t
OH
3
3
3
3
ns
2
CAS latency=2
3
3
3
3
CLK high pulse width
t
CH
2.5
2.5
3
3
ns
3
CLK low pulse width
t
CL
2.5
2.5
3
3
ns
3
Input setup time
t
SS
1.5
1.5
2
2
ns
3
Input hold time
t
SH
0.8
0.8
1
1
ns
3
CLK to output in Low-Z
t
SLZ
1
1
1
1
ns
2
CLK to output
in Hi-Z
CAS latency=3
t
SHZ
5.4
5.4
6
6
ns
CAS latency=2
5.4
6
6
7
1. Parameters depend on programmed CAS latency.
2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.
3. Assumed input rise and fall time (tr & tf) = 1ns.
If tr & tf is longer than 1ns, transient time compensation should be considered,
i.e., [(tr + tf)/2-1]ns should be added to the parameter.
Notes :
相關(guān)PDF資料
PDF描述
K4S560432D-TL1L 16M x 4bit x 4 Banks Synchronous DRAM LVTTL
K4S560432D-TL75 16M x 4bit x 4 Banks Synchronous DRAM LVTTL
K4S560432D-TL7C 16M x 4bit x 4 Banks Synchronous DRAM LVTTL
K4S561632E-TL75 256Mb E-die SDRAM Specification
K4S561632E-TC60 256Mb E-die SDRAM Specification
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K4S560432D-TL1L 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 4bit x 4 Banks Synchronous DRAM LVTTL
K4S560432D-TL75 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 4bit x 4 Banks Synchronous DRAM LVTTL
K4S560432D-TL7C 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 4bit x 4 Banks Synchronous DRAM LVTTL
K4S560432E-NC 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die SDRAM Specification 54pin sTSOP-II
K4S560432E-NC75 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die SDRAM Specification 54pin sTSOP-II
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