參數(shù)資料
型號: K4S561632E-TC60
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 256Mb E-die SDRAM Specification
中文描述: 256Mb的電子芯片內(nèi)存規(guī)格
文件頁數(shù): 1/14頁
文件大小: 196K
代理商: K4S561632E-TC60
SDRAM 256Mb E-die (x4, x8, x16)
CMOS SDRAM
Rev. 1.5 May 2004
256Mb E-die SDRAM Specification
Revision 1.5
May 2004
* Samsung Electronics reserves the right to change products or specification without notice.
相關(guān)PDF資料
PDF描述
K4S561632E-TC75 256Mb E-die SDRAM Specification
K4S561632E 256Mb E-die SDRAM Specification
K4S561632E-TL60 256Mb E-die SDRAM Specification
K4S561633F 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
K4S561633F-C 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K4S561632E-TC75 制造商:Samsung Semiconductor 功能描述:
K4S561632E-TC75T00 制造商:Samsung SDI 功能描述:PN may be NE
K4S561632E-TL60 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die SDRAM Specification
K4S561632E-TL75 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die SDRAM Specification
K4S561632E-UC60 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)