參數(shù)資料
型號: K4S561632E-TC75
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 256Mb E-die SDRAM Specification
中文描述: 256Mb的電子芯片內(nèi)存規(guī)格
文件頁數(shù): 2/14頁
文件大?。?/td> 196K
代理商: K4S561632E-TC75
SDRAM 256Mb E-die (x4, x8, x16)
CMOS SDRAM
Rev. 1.5 May 2004
Revision History
Revision 1.0 (May. 2003)
- First release.
Revision 1.1 (June. 2003)
- Correct Typo
Revision 1.2 (June. 2003)
- Added 166MHz speed bin in x16
Revision 1.3 (September. 2003)
- Corrected typo in ordering information.
Revision 1.4 (February, 2004)
- Corrected typo.
Revision 1.5 (May, 2004)
Added Note 5. sentense of tRDL parameter
相關(guān)PDF資料
PDF描述
K4S561632E 256Mb E-die SDRAM Specification
K4S561632E-TL60 256Mb E-die SDRAM Specification
K4S561633F 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
K4S561633F-C 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
K4S561633F-E 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K4S561632E-TC75T00 制造商:Samsung SDI 功能描述:PN may be NE
K4S561632E-TL60 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die SDRAM Specification
K4S561632E-TL75 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die SDRAM Specification
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K4S561632E-UC75 制造商:Samsung Semiconductor 功能描述: