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參數(shù)資料
| 型號： | K4S561632E |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256Mb E-die SDRAM Specification |
| 中文描述： | 256Mb的電子芯片內(nèi)存規(guī)格 |
| 文件頁數(shù)： | 11/14頁 |
| 文件大?。?/td> | 196K |
| 代理商： | K4S561632E |
SDRAM 256Mb E-die (x4, x8, x16)
CMOS SDRAM
Rev. 1.5 May 2004
DQ BUFFER OUTPUT DRIVE CHARACTERISTICS
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Notes
Output rise time
trh
Measure in linear
region : 1.2V ~ 1.8V
Measure in linear
region : 1.2V ~ 1.8V
Measure in linear
region : 1.2V ~ 1.8V
Measure in linear
region : 1.2V ~ 1.8V
1.37
4.37
Volts/ns
3
Output fall time
tfh
1.30
3.8
Volts/ns
3
Output rise time
trh
2.8
3.9
5.6
Volts/ns
1,2
Output fall time
tfh
2.0
2.9
5.0
Volts/ns
1,2
1. Rise time specification based on 0pF + 50
to V
SS
, use these values to design to.
2. Fall time specification based on 0pF + 50
to V
DD
, use these values to design to.
3. Measured into 50pF only, use these values to characterize to.
4. All measurements done with respect to V
SS
.
Notes :
AC CHARACTERISTICS
(AC operating conditions unless otherwise noted)
Parameter
Symbol
60
75
Unit
Note
Min
6
-
Max
Min
7.5
10
Max
CLK cycle time
CAS latency=3
CAS latency=2
CAS latency=3
CAS latency=2
CAS latency=3
CAS latency=2
t
CC
1000
1000
ns
1
CLK to valid
output delay
t
SAC
5
-
5.4
6
ns
1,2
Output data
hold time
t
OH
2.5
-
2.5
2.5
1.5
1
1
3
3
ns
2
CLK high pulse width
CLK low pulse width
Input setup time
Input hold time
CLK to output in Low-Z
t
CH
t
CL
t
SS
t
SH
t
SLZ
2.5
2.5
1.5
0.8
1
ns
ns
ns
ns
ns
3
3
3
3
2
CLK to output in Hi-Z
CAS latency=3
CAS latency=2
t
SHZ
5
-
5.4
6
ns
1. Parameters depend on programmed CAS latency.
2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.
3. Assumed input rise and fall time (tr & tf) = 1ns.
If tr & tf is longer than 1ns, transient time compensation should be considered,
i.e., [(tr + tf)/2-1]ns should be added to the parameter.
Notes :
相關PDF資料 |
PDF描述 |
|---|---|
| K4S561632E-TL60 | 256Mb E-die SDRAM Specification |
| K4S561633F | 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC |
| K4S561633F-C | 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC |
| K4S561633F-E | 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC |
| K4S561633F-F1H | 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC |
相關代理商/技術參數(shù) |
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|---|---|
| K4S561632E-TC60 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die SDRAM Specification |
| K4S561632E-TC75 | 制造商:Samsung Semiconductor 功能描述: |
| K4S561632E-TC75T00 | 制造商:Samsung SDI 功能描述:PN may be NE |
| K4S561632E-TL60 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die SDRAM Specification |
| K4S561632E-TL75 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die SDRAM Specification |
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