參數(shù)資料
型號(hào)： K4S643232C-TC60
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： Low Noise Precision Advanced LinCMOS(TM) Single Operational Amplifier 20-LCCC -55 to 125
中文描述： 200萬(wàn)× 32內(nèi)存為512k × 32 × 4銀行同步DRAM LVTTL
文件頁(yè)數(shù)： 38/43頁(yè)
文件大?。?/td> 1155K
代理商： K4S643232C-TC60
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19
CMOS SDRAM
K4S643232C
REV. 1.1 Nov. '99
- 38
Write Interrupted by Precharge Command & Write Burst Stop Cycle @ Burst Length=Full page
Row Active
(A-Bank)
Burst Stop
Write
(A-Bank)
Precharge
(A-Bank)
: Don't care
Write
(A-Bank)
*Note 2,4
tBDL
*Note :
1. At full page mode, burst is wrap-around at the end of burst. So auto precharge is impossible.
2. Data-in at the cycle of interrupted by precharge can not be written into the corresponding memory cell. It is defined by AC
parameter of t
RDL.
DQM at write interrupted by precharge command is needed to prevent invalid write.
DQM should mask invalid input data on precharge command cycle when asserting precharge before end of burst.
Input data after Row precharge cycle will be masked internally.
3. Burst stop is valid at every burst length.
4. For -55/60/70/80/10, tRDL=1CLK product can be supported within restricted amounts and it will be distinguished by bucket code
"NV". From the next generation, tRDL will be only 2CLK for every clock frequency.
HIGH
tRDL
BA
0
BA
1
DQ
ADDR
CAS
RAS
CS
CKE
CLOCK
WE
DQM
A
10
/AP
DAa0
DAa1
DAa2
DAa3
DAa4
DAb0
DAb1
DAb2
DAb3
DAb4
DAb5
RAa
CAa
CAb
RAa
相關(guān)PDF資料
PDF描述
K4S643232C-TC70 Low Noise Precision Advanced LinCMOS(TM) Single Operational Amplifier 8-CDIP -55 to 125
K4S643232E 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
K4S643232E-TE70 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V)
K4S643232E-TC45 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
K4S643232E-TC50 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K4S643232CTC70 制造商:Samsung Semiconductor 功能描述:
K4S643232C-TC70 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
K4S643232C-TC70000 制造商:Samsung SDI 功能描述:DRAM Chip SDRAM 64M-Bit 2Mx32 3.3V 86-Pin TSOP-II Tray
K4S643232C-TC80 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
K4S643232C-TC8000 制造商:Samsung Semiconductor 功能描述:
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